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STF130N10F3 Datenblatt(PDF) 1 Page - STMicroelectronics |
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1 / 23 page This is information on a product in full production. November 2012 Doc ID 018492 Rev 3 1/23 23 STF130N10F3, STFI130N10F3, STH130N10F3-2, STP130N10F3 N-channel 100 V, 7.8 m Ω typ., 120 A STripFET™III Power MOSFET in TO-220FP, I²PAKFP, H²PAK-2 and TO-220 packages Datasheet — production data Features ■ Ultra low on-resistance ■ 100% avalanche tested Applications ■ High current switching applications Description These devices are N-channel enhancement mode Power MOSFETs produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize on- resistance and gate charge to provide superior switching performance. Figure 1. Internal schematic diagram Order codes VDSS RDS(on) max. ID STF130N10F3 100 V 9.6 m Ω 46 A STFI130N10F3 STH130N10F3-2 9.3 m Ω 120 A STP130N10F3 9.6 m Ω 1 2 3 TAB 1 2 3 TO-220FP TO-220 1 2 TAB 3 H²PAK-2 1 2 3 I²PAKFP Table 1. Device summary Order codes Marking Package Packaging STF130N10F3 130N10F3 TO-220FP Tube STFI130N10F3 I²PAKFP Tube STH130N10F3-2 H²PAK-2 Tape and reel STP130N10F3 TO-220 Tube www.st.com |
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