Datenblatt-Suchmaschine für elektronische Bauteile |
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KSE3055T Datenblatt(PDF) 1 Page - Fairchild Semiconductor |
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KSE3055T Datenblatt(HTML) 1 Page - Fairchild Semiconductor |
1 / 4 page ©2000 Fairchild Semiconductor International Rev. A1, December 2000 NPN Silicon Transistor Absolute Maximum Ratings T C=25°C unless otherwise noted Electrical Characteristics T C=25°C unless otherwise noted * Pulse test: PW ≤300µs, duty cycle≤2% Pulse Symbol Parameter Value Units VCBO Collector -Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current 10 A IB Base Current 6 A PC Collector Dissipation (TC=25°C) 75 W Collector Dissipation (Ta=25°C) 0.6 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Symbol Parameter Test Condition Min. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC = 200mA, IB = 0 60 V ICEO Collector Cut-off Current VCE = 30V, IB = 0 700 µA ICEX1 ICEX2 Collector Cut-off Current VCE = 70V, VBE(off) = -1.5V VCE = 70V, VBE(off) = -1.5V @ TC = 150°C 1 5 mA mA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 5 mA hFE *DC Current Gain VCE = 4V, IC = 4A VCE = 4V, IC = 10A 20 5 100 VCE(sat) *Collector-Emitter Saturation Voltage IC = 4A, IB = 0.4A IC = 10A, IB = 3.3A 1.1 8 V V VBE (on) *Base-Emitter On Voltage VCE = 4V, IC = 4A 1.8 V fT Current Gain Bandwidth Product VCE = 10V, IC = 500mA 2 MHz KSE3055T General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz (Min.) 1.Base 2.Collector 3.Emitter 1 TO-220 |
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