Datenblatt-Suchmaschine für elektronische Bauteile |
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KSR1007 Datenblatt(PDF) 1 Page - Fairchild Semiconductor |
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KSR1007 Datenblatt(HTML) 1 Page - Fairchild Semiconductor |
1 / 4 page ©2002 Fairchild Semiconductor Corporation Rev. A2, October 2002 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T a=25°C unless otherwise noted Electrical Characteristics T a=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 10 V IC Collector Current 100 mA PC Collector Power Dissipation 300 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC=10µA, IE=0 50 V BVCEO Collector-Emitter Breakdown Voltage IC=100µA, IB=0 50 V ICBO Collector Cut-off Current VCB=40V, IE=0 0.1 µA hFE DC Current Gain VCE=5V, IC=5mA 68 VCE(sat) Collector-Emitter Saturation Voltage IC=10mA, IB=0.5mA 0.3 V Cob Output Capacitance VCB=10V, IE=0 f=1MHz 3.7 pF fT Current Gain Bandwidth Product VCE=10V, IC=5mA 250 MHz VI(off) Input Off Voltage VCE=5V, IC=100µA0.4 V VI(on) Input On Voltage VCE=0.3V, IC=2mA 2.5 V R1 Input Resistor 15 22 29 K Ω R1/R2 Resistor Ratio 0.42 0.47 0.52 KSR1007 Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=22KΩ, R2=47KΩ) • Complement to KSR2007 Equivalent Circuit B E C R1 R2 1. Emitter 2. Collector 3. Base TO-92 1 |
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Ähnliche Beschreibung - KSR1007 |
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