SI6433BDQ datasheet(4/11 Pages) VISHAY

Teilenummer	SI6433BDQ

Bauteilbeschribung	P-Channel 2.5-V (G-S) MOSFET

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Document Number: 72511

S-80682-Rev. C, 31-Mar-08

Vishay Siliconix

Si6433BDQ

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Threshold Voltage

- 0.2

- 0.1

0.0

0.1

0.2

0.3

0.4

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

TJ - Temperature (°C)

Single Pulse Power, Junction-to-Ambient

0

30

50

10

20

Time (s)

40

10

1

10-2

10-3

10-1

Safe Operating Area, Junction-to-Case

100

1

0.1

1

10

100

0.01

10

0.1

Limited

by R

*

DS(on)

TC = 25 °C

Single Pulse

10 ms

100 ms

1 s

10 s

DC

1 ms

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which R DS(on) is specified

Normalized Thermal Transient Impedance, Junction-to-Ambient

10-3

10-2

1

10

600

10-1

10-4

100

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Square Wave Pulse Duration (s)

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 100 °C/W

3. TJM - TA = PDMZthJA(t)

t1

t2

t1

t2

Notes:

4. Surface Mounted

PDM

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