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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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IRF5210LPBF Datenblatt(PDF) 2 Page - International Rectifier |
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IRF5210LPBF Datenblatt(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRF5210S/LPbF 2 www.irf.com Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11) Starting TJ= 25°C, L = 0.46mH RG = 25Ω, IAS = -23A. (See Figure 12) ISD ≤ -23A, di/dt ≤ -650A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. Pulse width ≤ 300µs; duty cycle ≤ 2%.
When mounted on 1" square PCB (FR-4or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage-100 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.11 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– ––– 60 m Ω VGS(th) Gate Threshold Voltage-2.0 ––– -4.0 V gfs Forward Transconductance 9.5 ––– ––– S IDSS Drain-to-Source Leakage Current ––– ––– -50 µA ––– ––– -250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage––– ––– -100 Qg Total Gate Charge ––– 150 230 nC Qgs Gate-to-Source Charge ––– 22 33 Qgd Gate-to-Drain ("Miller") Charge––– 81 120 td(on) Turn-On Delay Time ––– 14 ––– ns tr Rise Time ––– 63 ––– td(off) Turn-Off Delay Time ––– 72 ––– tf Fall Time ––– 55 ––– LD Internal Drain Inductance ––– 4.5 ––– nH Between lead, 6mm (0.25in.) LS Internal Source Inductance ––– 7.5 ––– from package and center of die contact Ciss Input Capacitance ––– 2780 ––– pF Coss Output Capacitance ––– 800 ––– Crss Reverse Transfer Capacitance ––– 430 ––– Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– -38 (Body Diode) A ISM Pulsed Source Current ––– ––– -140 (Body Diode) Ã VSD Diode Forward Voltage ––– ––– -1.6 V trr Reverse Recovery Time ––– 170 260 ns Qrr Reverse Recovery Charge ––– 1180 1770 nC ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) VDS = VGS, ID = -250µA VDS = -100V, VGS = 0V VDS = -80V, VGS = 0V, TJ = 125°C Conditions VGS = 0V, ID = -250µA Reference to 25°C, ID = -1mA VGS = 10V, ID = -38A f TJ = 25°C, IF = -23A, VDD = -25V di/dt = -100A/µs f TJ = 25°C, IS = -23A, VGS = 0V f showing the integral reverse p-n junction diode. VGS = -10V f MOSFET symbol VGS = 0V VDS = -25V Conditions ƒ = 1.0MHz, See Fig. 5 RG = 2.4 Ω ID = -23A VDS = -50V, ID = -23A VDD = -50V ID = -23A VGS = 20V VGS = -20V VDS = -80V VGS = -10V f |
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