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IRF7759L2TRPBF Datenblatt(PDF) 1 Page - International Rectifier

Teilenummer IRF7759L2TRPBF
Bauteilbeschribung  RoHS Compliant, Halogen Free
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Hersteller  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF7759L2TRPBF Datenblatt(HTML) 1 Page - International Rectifier

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1
DirectFET
™ Power MOSFET ‚
Typical values (unless otherwise specified)
PD - 96283
IRF7759L2TRPbF
IRF7759L2TR1PbF
DirectFET
™ ISOMETRIC
L8
Applicable DirectFET Outline and Substrate Outline

l RoHS Compliant, Halogen Free

l Lead-Free (Qualified up to 260°C Reflow)
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible

l Compatible with existing Surface Mount Techniques

l Industrial Qualified
Description
The IRF7759L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to
achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The DirectFET package
is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems.
The IRF7759L2TR/TR1PbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses
in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system
reliability improvements, and makes this device ideal for high performance power converters.
11/16/09
Fig 1. Typical On-Resistance vs. Gate Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.056mH, RG = 25Ω, IAS = 96A.
Notes:
Fig 2. Typical On-Resistance vs. Drain Current
SB
SC
M2
M4
L4
L6
L8
D
S
G
D
S
S
S
S
S
S
S
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
VGS
Gate-to-Source Voltage
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)f
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)f
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)e
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited) f
IDM
Pulsed Drain Current
g
EAS
Single Pulse Avalanche Energy
h
mJ
IAR
Avalanche Current
Ãg
A
A
V
96
375
257
Max.
113
26
640
±20
75
160
2
4
6
8
10
12
14
16
18
20
V GS, Gate -to -Source Voltage (V)
0
2
4
6
8
I D = 96A
T J = 25°C
T J = 125°C
15
30
45
60
75
90
105
ID, Drain Current (A)
1.65
1.75
1.85
1.95
TA= 25°C
VGS = 8.0V
VGS = 7.0V
VGS = 10V
VGS = 15V
VDSS
VGS
RDS(on)
75V min ±20V max 1.8m
Ω@ 10V
Qg tot
Qgd
Vgs(th)
200nC
62nC
3.0V


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