Datenblatt-Suchmaschine für elektronische Bauteile |
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SI4705 Datenblatt(PDF) 4 Page - Silicon Laboratories |
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SI4705 Datenblatt(HTML) 4 Page - Silicon Laboratories |
4 / 36 page Si4704/05-C40 4 Rev. 1.0 1. Electrical Specifications Table 1. Recommended Operating Conditions Parameter Symbol Test Condition Min Typ Max Unit Supply Voltage VDD 2.7 — 5.5 V Interface Supply Voltage VIO 1.85 — 3.6 V Digital Power Supply Powerup Rise Time VDRISE 10 — — µs Interface Power Supply Powerup Rise Time VIORISE 10 — — µs Ambient Temperature TA –20 25 85 C Note: All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions. Typical values apply at VDD= 3.3 V and 25 C unless otherwise stated. Parameters are tested in production unless otherwise stated. Table 2. Absolute Maximum Ratings1,2 Parameter Symbol Value Unit Supply Voltage VDD –0.5 to 5.8 V Interface Supply Voltage VIO –0.5 to 3.9 V Input Current3 IIN 10 mA Input Voltage3 VIN –0.3 to (VIO + 0.3) V Operating Temperature TOP –40 to 95 C Storage Temperature TSTG –55 to 150 C RF Input Level4 0.4 VPK Notes: 1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure beyond recommended operating conditions for extended periods may affect device reliability. 2. The Si4704/05 devices are high-performance RF integrated circuits with certain pins having an ESD rating of < 2 kV HBM. Handling and assembly of these devices should be done only at ESD-protected workstations. 3. For input pins SCLK, SEN, SDIO, RST, RCLK, DCLK, DFS, GPO1, GPO2, and GPO3. 4. At RF input pin, FMI. |
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