Datenblatt-Suchmaschine für elektronische Bauteile |
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SI5330L-A00228-GM Datenblatt(PDF) 4 Page - Silicon Laboratories |
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SI5330L-A00228-GM Datenblatt(HTML) 4 Page - Silicon Laboratories |
4 / 20 page Si5330 4 Rev. 1.0 2. Electrical Specifications Table 1. Recommended Operating Conditions (VDD = 1.8 V –5% to +10%, 2.5 V ±10%, or 3.3 V ±10%, TA = –40 to 85°C) Parameter Symbol Test Condition Min Typ Max Unit Ambient Temperature TA –40 25 85 °C Core Supply Voltage VDD 2.97 3.3 3.63 V 2.25 2.5 2.75 V 1.71 1.8 1.98 V Output Buffer Supply Voltage VDDOn 1.4 — 3.63 V Note: All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions. Typical values apply at nominal supply voltages and an operating temperature of 25 °C unless otherwise noted. Table 2. DC Characteristics (VDD = 1.8 V –5% to +10%, 2.5 V ±10%, or 3.3 V ±10%, TA = –40 to 85°C) Parameter Symbol Test Condition Min Typ Max Unit Core Supply Current IDD 50 MHz refclk — 10 — mA Output Buffer Supply Current IDDOx LVPECL, 710 MHz — — 30 mA LVDS, 710 MHz — — 8 mA HCSL, 250 MHz 2 pF load capacitance —— 20 mA SSTL, 350 MHz — — 19 mA CMOS, 50 MHz 15 pF load capacitance —— 28 mA CMOS, 200 MHz 2 pF load capacitance —— 28 mA HSTL, 350 MHz — — 19 mA |
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