2SC3356-T1B-A datasheet(4/9 Pages) RENESAS

Teilenummer	2SC3356-T1B-A

Bauteilbeschribung	NPN Silicon RF Transistor

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Hersteller	RENESAS [Renesas Technology Corp]

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4 / 9 page

2SC3356

R09DS0021EJ0300 Rev.3.00

Page 4 of 7

Jun 28, 2011

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50 70

Collector Current IC (mA)

NOISE FIGURE vs.

COLLECTOR CURRENT

VCE = 10 V

f = 1 GHz

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Collector to Emitter Voltage VCE (V)

NOISE FIGURE, INSERTION POWER GAIN

vs. COLLECTOR TO EMITTER VOLTAGE

f = 1 GHz

IC = 20 mA

|S21e|

2

NF

Remark The graphs indicate nominal characteristics.

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