2SC5508-T2-A datasheet(5/10 Pages) RENESAS

Teilenummer	2SC5508-T2-A

Bauteilbeschribung	NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION

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Hersteller	RENESAS [Renesas Technology Corp]

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2SC5508

Chapter Title

R09DS0055EJ0200 Rev.2.00

Page 5 of 8

Mar 5, 2013

Noise Characteristics

Collector Current IC (mA)

6

5

4

3

2

1

0

1

10

100

30

25

20

15

10

5

0

NF

f = 1.0 GHz

VCE = 2 V

Ga

6

5

4

3

2

1

0

30

25

20

15

10

5

0

1

10

100

Ga

NF

f = 1.5 GHz

VCE = 2 V

1

10

100

6

5

4

3

2

1

0

30

25

20

15

10

5

0

Ga

NF

f = 2.0 GHz

VCE = 2 V

1

10

100

6

5

4

3

2

1

0

30

25

20

15

10

5

0

Ga

NF

f = 2.5 GHz

VCE = 2 V

NOISE FIGURE, ASSOCIATED GAIN

vs. COLLECTOR CURRENT

NOISE FIGURE, ASSOCIATED GAIN

vs. COLLECTOR CURRENT

NOISE FIGURE, ASSOCIATED GAIN

vs. COLLECTOR CURRENT

NOISE FIGURE, ASSOCIATED GAIN

vs. COLLECTOR CURRENT

Remark The graphs indicate nominal characteristics.

S-PARAMETERS

S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the

parameters to microwave circuit simulators without the need for keyboard inputs.

Click here to download S-parameters.

[Products]

→ [RF Devices] → [Device Parameters]

URL http://www.renesas.com/products/microwave/

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