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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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IRF7799L2TR1PBF Datenblatt(PDF) 1 Page - International Rectifier |
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IRF7799L2TR1PBF Datenblatt(HTML) 1 Page - International Rectifier |
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1 / 11 page  www.irf.com 1 DirectFET Power MOSFET Typical values (unless otherwise specified) PD - 96266 IRF7799L2TRPbF IRF7799L2TR1PbF DirectFET ISOMETRIC L8 Applicable DirectFET Outline and Substrate Outline l RoHS Compliant, Halogen Free l Lead-Free (Qualified up to 260°C Reflow) l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques l Industrial Qualified Description The IRF7799L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems. The IRF7799L2TR/TR1PbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance power converters. 08/31/09 Fig 1. Typical On-Resistance vs. Gate Voltage Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 1.42mH, RG = 25Ω, IAS = 21A. Pulse width ≤ 400µs; duty cycle ≤ 2%. Notes: Fig 2. Typical On-Resistance vs. Drain Current SB SC M2 M4 L4 L6 L8 VDSS VGS RDS(on) 250V min ± 30V max 32m Ω@ 10V Qg tot Qgd Vgs(th) 110nC 39nC 4.0V 4 8 12 16 20 VGS, Gate -to -Source Voltage (V) 20 40 60 80 100 120 140 160 180 200 ID = 21A TJ = 25°C TJ = 125°C 0 20 40 60 80 100 ID, Drain Current (A) 25 30 35 40 45 50 55 60 TJ = 25°C Vgs = 7.0V Vgs = 8.0V Vgs = 10V Vgs = 15V Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)f ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)f ID @ TA = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)e ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) f IDM Pulsed Drain Current g EAS Single Pulse Avalanche Energy h mJ IAR Avalanche Current Ãg A 375 325 Max. 25 6.6 140 ±30 250 35 21 V A D S G D S S S S S S S |
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