Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC4227 Datenblatt(PDF) 6 Page - Renesas Technology Corp |
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2SC4227 Datenblatt(HTML) 6 Page - Renesas Technology Corp |
6 / 9 page Data Sheet PU10451EJ01V0DS 4 2SC4227 VCE = 3 V IC = 7 mA Frequency f (GHz) INSERTION POWER GAIN vs. FREQUENCY 25 20 15 5 10 0 0.1 0.2 0.5 1 2 5 VCE = 3 V f = 1 GHz Collector Current IC (mA) INSERTION POWER GAIN vs. COLLECTOR CURRENT 15 10 0 5 0.5 5 10 150 5 0 1 2 3 4 0.5 1 5 10 50 Collector Current IC (mA) NOISE FIGURE vs. COLLECTOR CURRENT VCE = 3 V f = 1 GHz Remark The graphs indicate nominal characteristics. S-PARAMETERS S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.ncsd.necel.com/ |
Ähnliche Teilenummer - 2SC4227 |
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Ähnliche Beschreibung - 2SC4227 |
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