2SC5606 datasheet(7/9 Pages) RENESAS

Teilenummer	2SC5606

Bauteilbeschribung	NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION

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Hersteller	RENESAS [Renesas Technology Corp]

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Data Sheet PU10781EJ01V0DS

5

2SC5606

NOISE FIGURE vs.

COLLECTOR CURRENT

Collector Current IC (mA)

3.0

2.5

2.0

1.5

1.0

0.5

0

1

10

100

VCE = 2 V

f = 2 GHz

Remark The graph indicates nominal characteristics.

S-PARAMETERS

S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import

of the parameters to microwave circuit simulators without the need for keyboard inputs.

Click here to download S-parameters.

[RF and Microwave]

→ [Device Parameters]

URL http://www.necel.com/microwave/en/

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