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IRF830A Datenblatt(PDF) 1 Page - Kersemi Electronic Co., Ltd.

Teilenummer IRF830A
Bauteilbeschribung  Low Gate Charge Qg Results in Simple Drive Requirement
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Hersteller  KERSEMI [Kersemi Electronic Co., Ltd.]
Direct Link  http://www.kersemi.com
Logo KERSEMI - Kersemi Electronic Co., Ltd.

IRF830A Datenblatt(HTML) 1 Page - Kersemi Electronic Co., Ltd.

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1
Power MOSFET
IRF830A, SiHF830A
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Effective Coss Specified
• Lead (Pb)-free Available
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptable Power Supply
• High Speed power Switching
TYPICAL SMPS TOPOLOGIES
• Two Transistor Forward
• Half Bridge
• Full Bridge
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 18 mH, RG = 25 Ω, IAS = 5.0 A (see fig. 12).
c. ISD ≤ 5.0 A, dI/dt ≤ 370 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
VDS (V)
500
RDS(on) (Ω)VGS = 10 V
1.4
Qg (Max.) (nC)
24
Qgs (nC)
6.3
Qgd (nC)
11
Configuration
Single
N-Channel MOSFET
G
D
S
TO-220
G
D
S
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package
TO-220
Lead (Pb)-free
IRF830APbF
SiHF830A-E3
SnPb
IRF830A
SiHF830A
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
500
V
Gate-Source Voltage
VGS
± 30
Continuous Drain Current
VGS at 10 V
TC = 25 °C
ID
5.0
A
TC = 100 °C
3.2
Pulsed Drain Currenta
IDM
20
Linear Derating Factor
0.59
W/°C
Single Pulse Avalanche Energyb
EAS
230
mJ
Repetitive Avalanche Currenta
IAR
5.0
A
Repetitive Avalanche Energya
EAR
7.4
mJ
Maximum Power Dissipation
TC = 25 °C
PD
74
W
Peak Diode Recovery dV/dtc
dV/dt
5.3
V/ns
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature)
for 10 s
300d
Mounting Torque
6-32 or M3 screw
10
lbf · in
1.1
N · m
www.kersemi.com


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