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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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IRF6894MPBF Datenblatt(PDF) 2 Page - International Rectifier |
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IRF6894MPBF Datenblatt(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRF6894MTRPbF 2 www.irf.com Pulse width ≤ 400μs; duty cycle ≤ 2%. Notes: D S G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 25 ––– ––– V ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 0.9 1.3 mΩ ––– 1.4 1.8 VGS(th) Gate Threshold Voltage 1.1 1.6 2.1 V VDS = VGS, ID = 100μA ΔVGS(th)/ΔTJ Gate Threshold Voltage Coefficient ––– -4.3 ––– mV/°C VDS = VGS, ID = 10mA IDSS Drain-to-Source Leakage Current ––– ––– 500 μA IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 255 ––– ––– S Qg Total Gate Charge ––– 26 39 Qgs1 Pre-Vth Gate-to-Source Charge ––– 6.6 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 2.8 ––– nC Qgd Gate-to-Drain Charge ––– 9.8 ––– Qgodr Gate Charge Overdrive ––– 6.8 ––– See Fig.15 Qsw Switch Charge (Qgs2 + Qgd) ––– 12.6 ––– Qoss Output Charge ––– 31 ––– nC RG Gate Resistance ––– 0.3 ––– Ω td(on) Turn-On Delay Time ––– 16 ––– tr Rise Time ––– 42 ––– td(off) Turn-Off Delay Time ––– 20 ––– ns tf Fall Time ––– 14 ––– Ciss Input Capacitance ––– 4160 ––– Coss Output Capacitance ––– 1310 ––– pF Crss Reverse Transfer Capacitance ––– 290 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) A ISM Pulsed Source Current (Body Diode) Ãg VSD Diode Forward Voltage ––– ––– 0.75 V trr Reverse Recovery Time ––– 28 42 ns Qrr Reverse Recovery Charge ––– 56 84 nC VDS = 13V VGS = 4.5V, ID = 26A i VGS = 16V VGS = -16V VDS = 20V, VGS = 0V Conditions VGS = 0V, ID = 1.0mA ID = 10mA ( 25°C-125°C) VGS = 10V, ID = 33A i VDS = 13V ID = 26A VDD = 13V, VGS = 4.5VÃi VDS = 16V, VGS = 0V MOSFET symbol RG= 1.8Ω VDS =13V, ID =26A Conditions See Fig.17 ƒ = 1.0MHz VGS = 4.5V ID = 26A VGS = 0V di/dt = 340A/μs i TJ = 25°C, IS = 26A, VGS = 0V i showing the integral reverse p-n junction diode. TJ = 25°C, IF =26A ––– ––– 33 ––– ––– 260 |
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