Datenblatt-Suchmaschine für elektronische Bauteile |
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4N37M Datenblatt(PDF) 2 Page - Fairchild Semiconductor |
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4N37M Datenblatt(HTML) 2 Page - Fairchild Semiconductor |
2 / 9 page ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com 4NXXM, H11AXM Rev. 1.0.2 2 Absolute Maximum Ratings (T A = 25°C unless otherwise specified) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Electrical Characteristics (T A = 25°C unless otherwise specified) Individual Component Characteristics Isolation Characteristics *Typical values at TA = 25°C Symbol Parameter Value Units TOTAL DEVICE TSTG Storage Temperature -40 to +150 °C TOPR Operating Temperature -40 to +100 °C TSOL Wave solder temperature (see page 8 for reflow solder profile) 260 for 10 sec °C PD Total Device Power Dissipation @ TA = 25°C Derate above 25°C 250 mW 2.94 EMITTER IF DC/Average Forward Input Current 60 mA VR Reverse Input Voltage 6 V IF(pk) Forward Current – Peak (300µs, 2% Duty Cycle) 3 A PD LED Power Dissipation @ TA = 25°C Derate above 25°C 120 mW 1.41 mW/°C DETECTOR VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 70 V VECO Emitter-Collector Voltage 7 V PD Detector Power Dissipation @ TA = 25°C Derate above 25°C 150 mW 1.76 mW/°C Symbol Parameter Test Conditions Min. Typ.* Max. Unit EMITTER VF Input Forward Voltage IF = 10mA 1.18 1.50 V IR Reverse Leakage Current VR = 6.0V 0.001 10 µA DETECTOR BVCEO Collector-Emitter Breakdown Voltage IC = 1.0mA, IF = 0 30 100 V BVCBO Collector-Base Breakdown Voltage IC = 100µA, IF = 0 70 120 V BVECO Emitter-Collector Breakdown Voltage IE = 100µA, IF = 0 7 10 V ICEO Collector-Emitter Dark Current VCE = 10V, IF = 0 1 50 nA ICBO Collector-Base Dark Current VCB = 10V 20 nA CCE Capacitance VCE = 0V, f = 1 MHz 8 pF Symbol Characteristic Test Conditions Min. Typ.* Max. Units VISO Input-Output Isolation Voltage f = 60Hz, t = 1 sec 7500 Vac(pk) RISO Isolation Resistance VI-O = 500 VDC 1011 Ω CISO Isolation Capacitance VI-O = &, f = 1MHz 0.2 2 pF |
Ähnliche Teilenummer - 4N37M |
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Ähnliche Beschreibung - 4N37M |
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