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IRF6612PBF Datenblatt(PDF) 1 Page - International Rectifier |
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IRF6612PBF Datenblatt(HTML) 1 Page - International Rectifier |
1 / 10 page www.irf.com 1 05/29/06 IRF6612PbF IRF661TRPbF Applicable DirectFET Package/Layout Pad (see p.8,9 for details) PD - 97215 RoHs Compliant Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques Description The IRF6612PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packag- ing to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6612PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/ high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF6612PbF has been optimized for parameters that are critical in synchronous buck converter’s SyncFET sockets. Fig 1. Typical On-Resistance vs. Gate-to-Source Voltage Fig 2. Total Gate Charge vs. Gate-to-Source Voltage Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.20mH, RG = 25Ω, IAS = 19A. Notes: DirectFET™ Power MOSFET Typical values (unless otherwise specified) DirectFET™ ISOMETRIC MX 2 3 4 5 6 7 8 9 10 VGS, Gate -to -Source Voltage (V) 0 1 2 3 4 5 6 7 8 9 10 ID = 24A TJ = 25°C TJ = 125°C 0 10203040 QG Total Gate Charge (nC) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 VDS= 24V VDS= 15V ID= 19A Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V A ID @ TA = 70°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current EAS Single Pulse Avalanche Energy mJ IAR Avalanche Current A 37 19 Max. 24 19 190 ±20 30 136 VDSS VGS RDS(on) RDS(on) 30V max ±20V max 2.5m Ω@ 10V 3.4mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 30nC 10nC 2.9nC 8.1nC 18nC 1.8V SQ SX ST MQ MX MT |
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