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NZT660 Datenblatt(PDF) 1 Page - Fairchild Semiconductor |
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NZT660 Datenblatt(HTML) 1 Page - Fairchild Semiconductor |
1 / 7 page July 1998 NZT660 / NZT660A PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Absolute Maximum Ratings* TA = 25°C unless otherwise noted °C -55 to +150 Operating and Storage Junction Temperature Range TJ, Tstg A 3 Collector Current - Continuous IC V 5 Emitter-Base Voltage VEBO V 80 Collector-Base Voltage VCBO V 60 Collector-Emitter Voltage VCEO Units NZT660/NZT660A Parameter Symbol *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted °C/W 62.5 Thermal Resistance, Junction to Ambient RθJA W 2 Total Device Dissipation PD NZT660/NZT660A Units Max Characteristic Symbol Nzt660.lwpPrPA 7/10/98 revC C E C B SOT-223 © 1998 Fairchild Semiconductor Corporation |
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