SI7658ADP-T1-GE3 datasheet(5/9 Pages) VISHAY

Teilenummer	SI7658ADP-T1-GE3

Bauteilbeschribung	N-Channel 30-V (D-S) MOSFET

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Hersteller	VISHAY [Vishay Siliconix]

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5 / 9 page

Document Number: 68640

S-81218-Rev. A, 02-Jun-08

www.vishay.com

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Vishay Siliconix

Si7658ADP

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0

34

68

102

136

170

0

255075

100

125

150

TC - Case Temperature (°C)

Package Limited

Power, Junction-to-Case

0

20

40

60

80

100

0

25

50

75

100

125

150

TC - Case Temperature (°C)

Power, Junction-to-Ambient

0.0

0.5

1.0

1.5

2.0

2.5

0

25

50

75

100

125

150

TC - Case Temperature (°C)

Ähnliche Beschreibung - SI7658ADP-T1-GE3

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