Datenblatt-Suchmaschine für elektronische Bauteile |
|
SI7483ADP-T1-E3 Datenblatt(PDF) 4 Page - Vishay Siliconix |
|
SI7483ADP-T1-E3 Datenblatt(HTML) 4 Page - Vishay Siliconix |
4 / 8 page www.vishay.com 4 Document Number: 73025 S09-0270-Rev. C, 16-Feb-09 Vishay Siliconix Si7483ADP TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Threshold Voltage - 0.4 - 0.2 0.0 0.2 0.4 0.6 0.8 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) Single Pulse Power 0 120 200 40 80 Time (s) 160 110 0.1 0.01 0.001 Safe Operating Area, Junction-to-Case 100 1 0.1 1 10 100 0.01 10 TC = 25 °C Single Pulse 0.1 Limited by RDS(on)* DC 1 ms 10 ms 100 ms 1 s 10 s VDS - Drain-to-Source Voltage (V) * VDS > minimum VGS at which RDS(on) is specified Normalized Thermal Transient Impedance, Junction-to-Ambient 10- 3 10- 2 1 10 600 10- 1 10- 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 50 °C/W 3. T JM - TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM |
Ähnliche Teilenummer - SI7483ADP-T1-E3 |
|
Ähnliche Beschreibung - SI7483ADP-T1-E3 |
|
|
Link URL |
Privatsphäre und Datenschutz |
ALLDATASHEETDE.COM |
War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |