Datenblatt-Suchmaschine für elektronische Bauteile |
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TPIC6C595DRG4 Datenblatt(PDF) 3 Page - Texas Instruments |
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TPIC6C595DRG4 Datenblatt(HTML) 3 Page - Texas Instruments |
3 / 20 page TPIC6C595 POWER LOGIC 8BIT SHIFT REGISTER SLIS061C − JULY 1998 − REVISED APRIL 2005 3 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 schematic of inputs and outputs EQUIVALENT OF EACH INPUT TYPICAL OF ALL DRAIN OUTPUTS VCC Input GND GND DRAIN 33 V 20 V 25 V 12 V absolute maximum ratings over recommended operating case temperature range (unless otherwise noted)† Logic supply voltage, VCC (see Note 1) 7 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Logic input voltage range, VI −0.3 V to 7 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power DMOS drain-to-source voltage, VDS (see Note 2) 33 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous source-to-drain diode anode current 250 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pulsed source-to-drain diode anode current (see Note 3) 500 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pulsed drain current, each output, all outputs on, ID, TC = 25°C (see Note 3) 250 mA . . . . . . . . . . . . . . . . . . . Continuous drain current, each output, all outputs on, ID, TC = 25°C 100 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . Peak drain current single output, IDM,TC = 25°C (see Note 3) 250 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single-pulse avalanche energy, EAS (see Figure 4) 30 mJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Avalanche current, IAS (see Note 4) 200 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous total dissipation See Dissipation Rating Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating virtual junction temperature range, TJ −40 °C to 150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating case temperature range, TC −40 °C to 125°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage temperature range, Tstg −65 °C to 150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. All voltage values are with respect to GND. 2. Each power DMOS source is internally connected to GND. 3. Pulse duration ≤ 100 µs and duty cycle ≤ 2%. 4. DRAIN supply voltage = 15 V, starting junction temperature (TJS) = 25°C, L = 1.5 H, IAS = 200 mA (see Figure 4). DISSIPATION RATING TABLE PACKAGE TC ≤ 25°C POWER RATING DERATING FACTOR ABOVE TC = 25°C TC = 125°C POWER RATING D 1087 mW 8.7 mW/ °C 217 mW N 1470 mW 11.7 mW/ °C 294 mW PW 1372 mW 10.976 mW/ °C 274 mW |
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