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TPIC5302D Datenblatt(PDF) 1 Page - Texas Instruments

Teilenummer TPIC5302D
Bauteilbeschribung  3-CHANNEL INDEPENDENT POWER DMOS ARRAY
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TPIC5302
3CHANNEL INDEPENDENT POWER DMOS ARRAY
SLIS029B − APRIL 1994 − REVISED SEPTEMBER 1995
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
POST OFFICE BOX 1443
HOUSTON, TEXAS
77251−1443
Copyright
1995, Texas Instruments Incorporated
1
Low r
DS(on) . . . 0.3 Ω Typ
High-Voltage Outputs ...60 V
Pulsed Current ...7 A Per Channel
Fast Commutation Speed
description
The TPIC5302 is a monolithic power DMOS array
that
consists
of
three
electrically
isolated
independent
N-channel
enhancement-mode
DMOS transistors. The TPIC5302 is offered in a
standard 16-pin small-outline surface-mount (D)
package.
The TPIC5302 is characterized for operation over
the case temperature range of − 40
°C to 125°C.
schematic
GATE1
DRAIN1
8
11
Q1
Q2
Q3
9, 10
12, 13
15, 16
Z1
Z2
Z3
SOURCE2
DRAIN2
DRAIN3
GATE2
GATE3
D1
D2
D3
SOURCE1
2, 3
14
GND
1
4, 5
6, 7
SOURCE3
absolute maximum ratings over operating case temperature range (unless otherwise noted)
Drain-to-source voltage, VDS
60 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Source-to-GND voltage
100 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Drain-to-GND voltage
100 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate-to-source voltage, VGS
±20 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous drain current, each output, all outputs on, TC = 25°C
1.4 A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous source-to-drain diode current
1.4 A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed drain current, each output, TC = 25°C (see Note 1 and Figure 6)
7 A
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Single-pulse avalanche energy, EAS, TC = 25°C (see Figure 4)
10.5 mJ
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous total power dissipation at (or below) TC = 25°C
1087 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating virtual junction temperature range, TJ
−40
°C to 150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating case temperature range, TC
−40
°C to 125°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, Tstg
−65
°C to 150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
260
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: Pulse duration = 10 ms and duty cycle = 2%
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
GND
SOURCE1
SOURCE1
SOURCE2
SOURCE2
SOURCE3
SOURCE3
GATE3
DRAIN1
DRAIN1
GATE1
DRAIN2
DRAIN2
GATE2
DRAIN3
DRAIN3
D PACKAGE
(TOP VIEW)
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.


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