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TPIC5302D Datenblatt(PDF) 1 Page - Texas Instruments |
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TPIC5302D Datenblatt(HTML) 1 Page - Texas Instruments |
1 / 12 page TPIC5302 3CHANNEL INDEPENDENT POWER DMOS ARRAY SLIS029B − APRIL 1994 − REVISED SEPTEMBER 1995 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251−1443 Copyright 1995, Texas Instruments Incorporated 1 • Low r DS(on) . . . 0.3 Ω Typ • High-Voltage Outputs ...60 V • Pulsed Current ...7 A Per Channel • Fast Commutation Speed description The TPIC5302 is a monolithic power DMOS array that consists of three electrically isolated independent N-channel enhancement-mode DMOS transistors. The TPIC5302 is offered in a standard 16-pin small-outline surface-mount (D) package. The TPIC5302 is characterized for operation over the case temperature range of − 40 °C to 125°C. schematic GATE1 DRAIN1 8 11 Q1 Q2 Q3 9, 10 12, 13 15, 16 Z1 Z2 Z3 SOURCE2 DRAIN2 DRAIN3 GATE2 GATE3 D1 D2 D3 SOURCE1 2, 3 14 GND 1 4, 5 6, 7 SOURCE3 absolute maximum ratings over operating case temperature range (unless otherwise noted)† Drain-to-source voltage, VDS 60 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Source-to-GND voltage 100 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Drain-to-GND voltage 100 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gate-to-source voltage, VGS ±20 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous drain current, each output, all outputs on, TC = 25°C 1.4 A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous source-to-drain diode current 1.4 A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pulsed drain current, each output, TC = 25°C (see Note 1 and Figure 6) 7 A . . . . . . . . . . . . . . . . . . . . . . . . . . . Single-pulse avalanche energy, EAS, TC = 25°C (see Figure 4) 10.5 mJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous total power dissipation at (or below) TC = 25°C 1087 mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating virtual junction temperature range, TJ −40 °C to 150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating case temperature range, TC −40 °C to 125°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage temperature range, Tstg −65 °C to 150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTE 1: Pulse duration = 10 ms and duty cycle = 2% 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 GND SOURCE1 SOURCE1 SOURCE2 SOURCE2 SOURCE3 SOURCE3 GATE3 DRAIN1 DRAIN1 GATE1 DRAIN2 DRAIN2 GATE2 DRAIN3 DRAIN3 D PACKAGE (TOP VIEW) PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
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