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IRFB18N50K Datenblatt(PDF) 1 Page - Kersemi Electronic Co., Ltd.

Teilenummer IRFB18N50K
Bauteilbeschribung  Power MOSFET
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Hersteller  KERSEMI [Kersemi Electronic Co., Ltd.]
Direct Link  http://www.kersemi.com
Logo KERSEMI - Kersemi Electronic Co., Ltd.

IRFB18N50K Datenblatt(HTML) 1 Page - Kersemi Electronic Co., Ltd.

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1
Power MOSFET
IRFB18N50K, SiHFB18N50K
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
and Current
•Low RDS(on)
• Lead (Pb)-free Available
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
• Hard Switched and High Frequency Circuits
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. Starting TJ = 25 °C, L = 2.5 mH, RG = 25 Ω, IAS = 17 A.
c. ISD ≤ 17 A, dI/dt ≤ 376 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
VDS (V)
500
RDS(on) (Ω)VGS = 10 V
0.26
Qg (Max.) (nC)
120
Qgs (nC)
34
Qgd (nC)
54
Configuration
Single
N-Channel MOSFET
G
D
S
TO-220
G
D
S
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package
TO-220
Lead (Pb)-free
IRFB18N50KPbF
SiHFB18N50K-E3
SnPb
IRFB18N50K
SiHFB18N50K
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
500
V
Gate-Source Voltage
VGS
± 30
Continuous Drain Current
VGS at 10 V
TC = 25 °C
ID
17
A
TC = 100 °C
11
Pulsed Drain Currenta
IDM
68
Linear Derating Factor
1.8
W/°C
Single Pulse Avalanche Energyb
EAS
370
mJ
Repetitive Avalanche Currenta
IAR
17
A
Repetitive Avalanche Energya
EAR
22
mJ
Maximum Power Dissipation
TC = 25 °C
PD
220
W
Peak Diode Recovery dV/dtc
dV/dt
7.8
V/ns
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature)
for 10 s
300d
Mounting Torque
6-32 or M3 screw
10
N
* Pb containing terminations are not RoHS compliant, exemptions may apply
www.kersemi.com


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