STF15N65M5 datasheet(3/17 Pages) STMICROELECTRONICS

Teilenummer	STF15N65M5

Bauteilbeschribung	N-channel 650 V, 0.308 廓 typ., 11 A MDmesh??V Power MOSFET in TO-220FP, I2PAKFP and TO-220 packages

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STF15N65M5, STFI15N65M5, STP15N65M5

Electrical ratings

Doc ID 022863 Rev 2

3/17

1

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220

TO-220FP

I2PAKFP

VGS

Gate-source voltage

± 25

V

ID

Drain current (continuous) at TC = 25 °C

11

11(1)

1.

Limited by maximum junction temperature.

A

ID

Drain current (continuous) at TC = 100 °C

6.9

6.9(1)

A

IDM

(1)

Drain current (pulsed)

44

44(1)

A

PTOT

Total dissipation at TC = 25 °C

85

25

W

dv/dt (2)

2.

ISD ≤ 11 A, di/dt ≤400 A/µs; VDD = 400 V, VDS(peak) < V(BR)DSS

Peak diode recovery voltage slope

15

V/ns

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t = 1 s; TC = 25 °C)

2500

V

Tstg

Storage temperature

- 55 to 150

°C

Tj

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

TO-220FP

I2PAKFP

TO-220

Rthj-case Thermal resistance junction-case max

5

1.47

°C/W

Rthj-amb Thermal resistance junction-ambient max

62.5

°C/W

Table 4.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetetive or not repetetive

(pulse width limited by Tjmax )

2.5

A

EAS

Single pulse avalanche energy (starting tj=

25°C, ID= IAR; VDD=50 V)

160

mJ

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