Datenblatt-Suchmaschine für elektronische Bauteile
  German  ▼
ALLDATASHEETDE.COM

X  

ADN2850BCPZ25-RL7 Datenblatt(PDF) 5 Page - Analog Devices

Teilenummer ADN2850BCPZ25-RL7
Bauteilbeschribung  Nonvolatile Memory, Dual 1024-Position Digital Resistor
Download  28 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Hersteller  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

ADN2850BCPZ25-RL7 Datenblatt(HTML) 5 Page - Analog Devices

  ADN2850BCPZ25-RL7 Datasheet HTML 1Page - Analog Devices ADN2850BCPZ25-RL7 Datasheet HTML 2Page - Analog Devices ADN2850BCPZ25-RL7 Datasheet HTML 3Page - Analog Devices ADN2850BCPZ25-RL7 Datasheet HTML 4Page - Analog Devices ADN2850BCPZ25-RL7 Datasheet HTML 5Page - Analog Devices ADN2850BCPZ25-RL7 Datasheet HTML 6Page - Analog Devices ADN2850BCPZ25-RL7 Datasheet HTML 7Page - Analog Devices ADN2850BCPZ25-RL7 Datasheet HTML 8Page - Analog Devices ADN2850BCPZ25-RL7 Datasheet HTML 9Page - Analog Devices Next Button
Zoom Inzoom in Zoom Outzoom out
 5 / 28 page
background image
Data Sheet
ADN2850
Rev. E | Page 5 of 28
INTERFACE TIMING AND EEMEM RELIABILITY CHARACTERISTICS—25 kΩ, 250 kΩ VERSIONS
Guaranteed by design and not subject to production test. See the Timing Diagrams section for the location of measured values. All input
control voltages are specified with tR = tF = 2.5 ns (10% to 90% of 3 V) and timed from a voltage level of 1.5 V. Switching characteristics are
measured using both VDD = 3 V and VDD = 5 V.
Table 2.
Parameter
Symbol
Conditions
Min
Typ1
Max
Unit
Clock Cycle Time (tCYC)
t1
20
ns
EE
AA
Setup Time
CS
t2
10
ns
CLK Shutdown Time to
AA
CSEE
AA
Rise
t3
1
tCYC
Input Clock Pulse Width
t4, t5
Clock level high or low
10
ns
Data Setup Time
t6
From positive CLK transition
5
ns
Data Hold Time
t7
From positive CLK transition
5
ns
AA
CSEE
AA
to SDO-SPI Line Acquire
t8
40
ns
AA
CSEE
AA
to SDO-SPI Line Release
t9
50
ns
CLK to SDO Propagation Delay
10F
2
t10
RP = 2.2 kΩ, CL < 20 pF
50
ns
CLK to SDO Data Hold Time
t11
RP = 2.2 kΩ, CL < 20 pF
0
ns
AA
CSEE
AA
High Pulse Width
11F
3
t12
10
ns
AA
CS
EE
AA
High to
AA
CSEE
AA
High3
t13
4
tCYC
RDY Rise to
AA
CSEE
AA
Fall
t14
0
ns
AA
CSEE
AA
Rise to RDY Fall Time
t15
0.15
0.3
ms
Store EEMEM Time
12F
4,
13F
5
t16
Applies to instructions 0x2, 0x3
15
50
ms
Read EEMEM Time4
t16
Applies to instructions 0x8, 0x9, 0x10
7
30
µs
AA
CSEE
AA
Rise to Clock Rise/Fall Setup
t17
10
ns
Preset Pulse Width (Asynchronous)
14F
6
tPRW
50
ns
Preset Response Time to Wiper Setting6
tPRESP
AA
PREE
AA
pulsed low to refresh wiper positions
30
µs
Power-On EEMEM Restore Time6
tEEMEM
30
µs
FLASH/EE MEMORY RELIABILITY
Endurance
15F
7
TA = 25°C
1
MCycles
100
kCycles
Data Retention
16F
8
100
Years
1
Typicals represent average readings at 25°C and VDD = 5 V.
2
Propagation delay depends on the value of VDD, RPULL-UP, and CL.
3
Valid for commands that do not activate the RDY pin.
4
RDY pin low only for Instruction 2, Instruction 3, Instruction 8, Instruction 9, Instruction 10, and the PR hardware pulse: CMD_8 ~ 20 µs; CMD_9, CMD_10 ~ 7 µs;
CMD_2, CMD_3 ~ 15 ms, PR hardware pulse ~ 30 µs.
5
Store EEMEM time depends on the temperature and EEMEM write cycles. Higher timing is expected at lower temperature and higher write cycles.
6
Not shown in Figure 2 and Figure 3.
7
Endurance is qualified to 100,000 cycles per JEDEC Standard 22, Method A117 and measured at −40°C, +25°C, and +85°C.
8
Retention lifetime equivalent at junction temperature (TJ) = 85°C per JEDEC Standard 22, Method A117. Retention lifetime based on an activation energy of 1 eV
derates with junction temperature in the Flash/EE memory.


Ähnliche Teilenummer - ADN2850BCPZ25-RL7

HerstellerTeilenummerDatenblattBauteilbeschribung
logo
Analog Devices
ADN2850BCPZ25-RL7 AD-ADN2850BCPZ25-RL7 Datasheet
749Kb / 30P
   Nonvolatile Memory, Dual 1024-Position Digital Resistor
More results

Ähnliche Beschreibung - ADN2850BCPZ25-RL7

HerstellerTeilenummerDatenblattBauteilbeschribung
logo
Analog Devices
ADN2850 AD-ADN2850_15 Datasheet
604Kb / 28P
   Nonvolatile Memory, Dual 1024-Position Digital Resistor
Rev. E
ADN2850 AD-ADN2850_16 Datasheet
749Kb / 30P
   Nonvolatile Memory, Dual 1024-Position Digital Resistor
AD5235 AD-AD5235_15 Datasheet
788Kb / 32P
   Nonvolatile Memory, Dual 1024-Position Digital Potentiometer
Rev. F
AD5235-EP AD-AD5235-EP Datasheet
376Kb / 16P
   Nonvolatile Memory, Dual 1024-Position Digital Potentiometer
REV. 0
AD5235BRUZ250 AD-AD5235BRUZ250 Datasheet
788Kb / 32P
   Nonvolatile Memory, Dual 1024-Position Digital Potentiometer
Rev. F
AD5235 AD-AD5235 Datasheet
102Kb / 10P
   Nonvolatile Memory, Dual 1024 Position Digital Potentiometers
REV PrD 6 Nov 2000
AD5231 AD-AD5231_15 Datasheet
536Kb / 28P
   Nonvolatile Memory, 1024-Position Digital Potentiometer
REV. D
AD5231 AD-AD5231 Datasheet
562Kb / 24P
   Nonvolatile Memory, 1024-Position Digital Potentiometers
REV. 0
ADN2850 AD-ADN2850 Datasheet
481Kb / 20P
   Nonvolatile Memory, Dual 1024 Position Programmable Resistors
REV. B
AD5232BRUZ10-REEL7 AD-AD5232BRUZ10-REEL7 Datasheet
867Kb / 24P
   Nonvolatile Memory,Dual 256-Position Digital Potentiometer
REV. C
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28


Datenblatt Download

Go To PDF Page


Link URL




Privatsphäre und Datenschutz
ALLDATASHEETDE.COM
War ALLDATASHEET hilfreich?  [ DONATE ] 

Über Alldatasheet   |   Werbung   |   Kontakt   |   Privatsphäre und Datenschutz   |   Linktausch   |   Hersteller
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com