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SI1563DH-T1-E3 Datenblatt(PDF) 1 Page - Vishay Siliconix

Teilenummer SI1563DH-T1-E3
Bauteilbeschribung  Complementary 20 V (D-S) Low-Threshold MOSFET
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Vishay Siliconix
Si1563DH
Document Number: 71963
S10-1054-Rev. B, 03-May-10
www.vishay.com
1
Complementary 20 V (D-S) Low-Threshold MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
TrenchFET® Power MOSFETs: 1.8 V Rated
Thermally Enhanced SC-70 Package
Fast Switching
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Load Switch for Portable Devices
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)ID (A)
N-Channel
20
0.280 at VGS = 4.5 V
1.28
0.360 at VGS = 2.5 V
1.13
0.450 at VGS = 1.8 V
1.00
P-Channel
- 20
0.490 at VGS = - 4.5 V
- 1.00
0.750 at VGS = - 2.5 V
- 0.81
1.10 at VGS = - 1.8 V
- 0.67
SOT-363
SC-70 (6-LEADS)
6
4
1
2
3
5
Top View
S1
G1
D2
D1
G2
S2
Marking Code
EB
XX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si1563DH-T1-E3 (Lead (Pb)-free)
Si1563DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1
S1
G1
N-Channel
P-Channel
D2
S2
G2
Notes:
a. Surface mounted on 1" x 1" FR4 board.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Unit
5 s
Steady State
5 s
Steady State
Drain-Source Voltage
VDS
20
- 20
V
Gate-Source Voltage
VGS
± 8
± 8
Continuous Drain Current (TJ = 150 °C)
a
TA = 25 °C
ID
1.28
1.13
- 1.00
- 0.88
A
TA = 85 °C
0.92
0.81
- 0.72
- 0.63
Pulsed Drain Current
IDM
4.0
- 3.0
Continuous Source Current (Diode Conduction)a
IS
0.61
0.48
- 0.61
- 0.48
Maximum Power Dissipationa
TA = 25 °C
PD
0.74
0.57
0.30
0.57
W
TA = 85 °C
0.38
0.30
0.16
0.3
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
t
≤ 5 s
RthJA
130
170
°C/W
Steady State
170
220
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
80
100


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