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SI1563DH-T1-E3 Datenblatt(PDF) 1 Page - Vishay Siliconix |
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SI1563DH-T1-E3 Datenblatt(HTML) 1 Page - Vishay Siliconix |
1 / 14 page Vishay Siliconix Si1563DH Document Number: 71963 S10-1054-Rev. B, 03-May-10 www.vishay.com 1 Complementary 20 V (D-S) Low-Threshold MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs: 1.8 V Rated • Thermally Enhanced SC-70 Package • Fast Switching • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Devices PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) N-Channel 20 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.00 P-Channel - 20 0.490 at VGS = - 4.5 V - 1.00 0.750 at VGS = - 2.5 V - 0.81 1.10 at VGS = - 1.8 V - 0.67 SOT-363 SC-70 (6-LEADS) 6 4 1 2 3 5 Top View S1 G1 D2 D1 G2 S2 Marking Code EB XX Lot Traceability and Date Code Part # Code Ordering Information: Si1563DH-T1-E3 (Lead (Pb)-free) Si1563DH-T1-GE3 (Lead (Pb)-free and Halogen-free) D1 S1 G1 N-Channel P-Channel D2 S2 G2 Notes: a. Surface mounted on 1" x 1" FR4 board. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Unit 5 s Steady State 5 s Steady State Drain-Source Voltage VDS 20 - 20 V Gate-Source Voltage VGS ± 8 ± 8 Continuous Drain Current (TJ = 150 °C) a TA = 25 °C ID 1.28 1.13 - 1.00 - 0.88 A TA = 85 °C 0.92 0.81 - 0.72 - 0.63 Pulsed Drain Current IDM 4.0 - 3.0 Continuous Source Current (Diode Conduction)a IS 0.61 0.48 - 0.61 - 0.48 Maximum Power Dissipationa TA = 25 °C PD 0.74 0.57 0.30 0.57 W TA = 85 °C 0.38 0.30 0.16 0.3 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t ≤ 5 s RthJA 130 170 °C/W Steady State 170 220 Maximum Junction-to-Foot (Drain) Steady State RthJF 80 100 |
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