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TPC8045-H Datenblatt(PDF) 1 Page - Toshiba Semiconductor

Teilenummer TPC8045-H
Bauteilbeschribung  Switching Regulator Applications Motor Drive Applications DC-DC Converter Applications
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Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

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TPC8045-H
2013-11-01
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)
TPC8045-H
Switching Regulator Applications
Motor Drive Applications
DC-DC Converter Applications
• Small footprint due to a small and thin package
• High-speed switching
• Small gate charge: QSW = 23 nC (typ.)
• Low drain-source ON-resistance:
RDS (ON) = 2.7 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 67 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)
• Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
40
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
40
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
18
Drain current
Pulsed (Note 1)
IDP
72
A
Drain power dissipation
(t
= 10 s)
(Note 2a)
PD
1.9
W
Drain power dissipation
(t
= 10 s)
(Note 2b)
PD
1.0
W
Single-pulse avalanche energy
(Note 3)
EAS
150
mJ
Avalanche current
IAR
18
A
Repetitive avalanche energy
(Tc=25℃) (Note 4)
EAR
0.06
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-6J1B
Weight: 0.085g (typ.)
Circuit Configuration
8
6
1
2
3
7
5
4
Start of commercial production
2008-10


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