Datenblatt-Suchmaschine für elektronische Bauteile |
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TPCA8047-H Datenblatt(PDF) 5 Page - Toshiba Semiconductor |
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TPCA8047-H Datenblatt(HTML) 5 Page - Toshiba Semiconductor |
5 / 7 page TPCA8047-H 2009-06-10 5 20 10 30 0 0 80 VDD = 32 V VDS = 32 V 8 16 40 12 4 16 0 20 60 8 20 40 50 8 16 0 0.5 1.5 −80 −40 0 40 80 120 160 2.5 1.0 2.0 10 0.1 100 1000 10000 1 10 100 Ciss Coss Crss 0 0.1 −0.2 1000 −0.6 −0.8 −1.2 VGS = 0 V 10 4.5 2 3 −0.4 10 100 1 1 −1.0 160 −40 0 40 80 120 −80 8 2 0 VGS = 10 V 6 VGS = 4.5 V 12 10 4 ID = 8, 16, 32 A ID = 8, 16, 32 A Drain-source voltage VDS (V) Capacitance – VDS Drain-source voltage VDS (V) IDR – VDS Ambient temperature Ta (°C) Vth – Ta Ambient temperature Ta (°C) RDS (ON) – Ta Total gate charge Qg (nC) Dynamic input/output characteristics Common source Ta = 25°C Pulse test Common source VGS = 0 V f = 1 MHz Ta = 25°C Common source VDS = 10 V ID = 0.5 mA Pulse test Common source Pulse test Common source ID = 32 A Ta = 25°C Pulse test |
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