Datenblatt-Suchmaschine für elektronische Bauteile |
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2SA1204 Datenblatt(PDF) 3 Page - Toshiba Semiconductor |
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2SA1204 Datenblatt(HTML) 3 Page - Toshiba Semiconductor |
3 / 4 page 2SA1204 2011-02-04 3 PC – Ta IC – VBE VCE (sat) – IC hFE – IC IC – VCE Collector current IC (mA) Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) Safe Operating Area Collector current IC (mA) Ambient temperature Ta (°C) 0 −8 −4 −2 0 −400 −800 Common emitter Ta = 25°C −600 −6 −200 IB = −1 mA −8 0 −7 −5 −4 −3 −2 −6 Common emitter VCE = −1 V −1 500 −30 −1000 −10 100 10 −100 −300 300 1000 Ta = 100°C 25 −25 50 30 −3 0 −1.6 −0.8 −0.4 0 −400 −800 Common emitter VCE = −1 V −600 −1.2 −200 −2.0 Ta = 100°C 25 −25 0 0 0.6 0.2 0.8 0.4 1.2 1.0 120 80 100 40 60 20 140 160 (1) Mounted on a ceramic substrate (250 mm 2 × 0.8 mm t) (2) No heat sink (1) (2) −1 −0.5 −30 −1000 −10 −0.1 −0.01 −100 −300 −0.3 −1 −0.05 −0.03 −3 Ta = 100°C 25 −25 Common emitter IC/IB = 25 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. Tested without a substrate. −0.1 −3 −0.3 −30 −100 −3 −30 −10 −100 −5 −50 IC max (pulse)* IC max (continuous) 100 ms* 1 ms* 10 ms* −10 −1 −300 −3000 −1000 −500 Ta = 25°C DC operation VCEO max |
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