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2SA1213 Datenblatt(PDF) 2 Page - Toshiba Semiconductor

Teilenummer 2SA1213
Bauteilbeschribung  Power Amplifier Applications
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Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SA1213 Datenblatt(HTML) 2 Page - Toshiba Semiconductor

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2SA1213
2009-12-21
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = −50 V, IE = 0
−0.1
μA
Emitter cut-off current
IEBO
VEB = −5 V, IC = 0
−0.1
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = −10 mA, IB = 0
−50
V
hFE (1)
(Note 3)
VCE = −2 V, IC = −0.5 A
70
240
DC current gain
hFE (2)
VCE = −2 V, IC = −2.0 A
20
Collector-emitter saturation voltage
VCE (sat)
IC = −1 A, IB = −0.05 A
−0.5
V
Base-emitter saturation voltage
VBE (sat)
IC = −1 A, IB = −0.05 A
−1.2
V
Transition frequency
fT
VCE = −2 V, IC = −0.5 A
120
MHz
Collector output capacitance
Cob
VCB = −10 V, IE = 0, f = 1 MHz
40
pF
Turn-on time
ton
0.1
Storage time
tstg
1.0
Switching time
Fall time
tf
0.1
μs
Note 3: hFE (1) classification O: 70 to 140, Y: 120 to 240
Marking
Note 4: A line beside a Lot No. identifies the indication of product Labels.
Without a line: [[Pb]]/INCLUDES > MCV
With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
IB2
−30 V
IB1
20 μs
IB1
IB2
IB1 = 0.05 A,IB2 = 0.05 A
DUTY CYCLE ≤ 1%
OUTPUT
INPUT
N
Part No. (or abbreviation code)
Lot No.
Note 4
Characteristics indicator


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