2SA1362

2007-11-01

1

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

2SA1362

Low Frequency Power Amplifier Applications

Power Switching Applications

• Suitable for driver stage of small motor

• Small package

Characteristics

Symbol

Rating

Unit

Collector-base voltage

−15

V

Collector-emitter voltage

−15

V

Emitter-base voltage

−5

V

Collector current

−800

mA

Base current

−160

mA

Collector power dissipation

200

mW

Junction temperature

150

°C

Storage temperature range

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Marking

Unit: mm

JEDEC

TO-236MOD

JEITA

SC-59

TOSHIBA

2-3F1A

Weight: 0.012 g (typ.)