2SK302

2007-11-01

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

2SK302

FM Tuner, VHF RF Amplifier Applications

• Low noise figure: NF = 1.7dB (typ.)

• Recommend operation voltage: 5~15 V

Characteristics

Symbol

Rating

Unit

Drain-source voltage

20

V

Gate-source voltage

±5

V

Drain current

30

mA

Drain power dissipation

150

mW

Channel temperature

125

°C

Storage temperature

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

⎯

⎯

±50

nA

Drain-source voltage

20

⎯

⎯

V

Drain current

(Note)

1.5

⎯

14

mA

Gate-source cut-off voltage

⎯

⎯

−2.5

V

Forward transfer admittance

⎯

10

⎯

mS

Input capacitance

⎯

3.0

⎯

pF

Reverse transfer capacitance

⎯

0.035

0.050

pF

Power gain

⎯

28

⎯

dB

Noise figure

NF

f

= 100 MHz (Figure 1)

⎯

1.7

3.0

dB

Unit: mm

JEDEC

TO-236

JEITA

―

TOSHIBA

2-3F1C

Weight: 0.012 g (typ.)