Datenblatt-Suchmaschine für elektronische Bauteile |
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MCZ33897BEF Datenblatt(PDF) 11 Page - Freescale Semiconductor, Inc |
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MCZ33897BEF Datenblatt(HTML) 11 Page - Freescale Semiconductor, Inc |
11 / 20 page Analog Integrated Circuit Device Data Freescale Semiconductor 11 33897/A/B/C/D/T ELECTRICAL CHARACTERISTICS DYNAMIC ELECTRICAL CHARACTERISTICS BUS (CONTINUED) High-Voltage Rising Output Delay 200 Ω ≤ R L ≤ 3332 Ω, 1.0 µs ≤ Load Time Constants ≤ 4.0 µs Measured from TXD=VIL to VBUS as follows: Max Time to VBUSMOD = 3.7 V, 6.0 V ≤ VBATT ≤ 26.5 V (14) Min Time to VBUSMOD = 1.0 V, 6.0 V ≤ VBATT ≤ 26.5 V (14) Max Time to VBUSMOD = 9.4 V, 12.0 V ≤ VBATT ≤ 26.5 V (14) tDLYHVRO 2.0 2.0 2.0 – – – 6.3 6.3 18 µs High-Voltage Falling Output Delay 200 Ω ≤ R L ≤ 3332 Ω, 1.0 µs ≤ Load Time Constants ≤ 4.0 µs, 12.0 V ≤ V BATT ≤ 26.5 V Measured from TXD=VIH to VBUS as follows: Max Time to VBUSMOD = 1.0 V (14) Min Time to VBUSMOD = 3.7 V (14) tDLYHVFO 1.8 1.8 – – 14 14 µs RECEIVER RXD Receive Delay Time (5.0 V ≤ V BATT ≤ 26.5 V) Awake tRDLY 0.2 – 1.0 µs Receive Delay Time (BUS Rising to RXD Falling, 5.0 V ≤ V BATT ≤ 26.5 V) Sleep tRDLYSL 10 – 70 µs CNTL CNTL Falling Delay Time (5.0 V ≤ V BATT ≤ 26.5 V) (33897/A/C/T only) t CNTLFDLY 300 – 1000 ms Notes 14. VBUSMOD is the voltage at the BUSMOD node in Figure 7, page 15. Table 5. Dynamic Electrical Characteristics (continued) Characteristics noted under conditions of -40 °C ≤ T A ≤ 125°C, unless otherwise stated. Voltages are relative to GND unless otherwise noted. All positive currents are into the terminal. All negative currents are out of the terminal. Characteristic Symbol Min Typ Max Unit |
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