STP21N90K5 datasheet(5/22 Pages) STMICROELECTRONICS

Teilenummer	STP21N90K5

Bauteilbeschribung	N-channel 900 V, 0.25 廓 typ., 18.5 A Zener-protected SuperMESH??5 Power MOSFET in a D2PAK, TO-220FP, TO-220 and TO-247 packages

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STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5

Electrical characteristics

Doc ID 16744 Rev 6

5/22

The built-in-back Zener diodes have specifically been designed to enhance not only the

device’s ESD capability, but also to make them safely absorb possible voltage transients that

may occasionally be applied from gate to source. In this respect the Zener voltage is

appropriate to achieve an efficient and cost-effective intervention to protect the device’s

integrity. These integrated Zener diodes thus avoid the usage of external components.

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 720 V, ID = 10 A,

RG=4.7 Ω, VGS=10 V

(see Figure 22)

-

17

27

52

40

-

ns

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

ISDM

Source-drain current

Source-drain current (pulsed)

-

19

76

A

VSD

(1)

1.

Pulsed: pulse duration = 300µs, duty cycle 1.5%

Forward on voltage

ISD= 18.5 A, VGS=0

-

1.5

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD= 18.5 A, VDD= 60 V

di/dt = 100 A/µs,

(see Figure 21)

-

548

12

46

ns

μC

A

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD= 18.5 A,VDD= 60 V

di/dt=100 A/µs,

Tj=150 °C

(see Figure 21)

-

660

15

45

ns

μC

A

Table 8.

Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)GSO Gate-source breakdown voltage IGS = ±1 mA, ID = 0

30-

-

V

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