2SA1037 datasheet(1/1 Pages) WINNERJOIN

Teilenummer	2SA1037

Bauteilbeschribung	PNP EPITAXIAL SILICON TRANSISTOR

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Hersteller	WINNERJOIN [SHENZHEN YONGERJIA INDUSTRY CO.,LTD]

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WEJ

ELECTRONIC

CO.,LTD

LOW FREQRENCY,LOW NOISE AMPLIFIER

to 2SC2712

Complemen

Collector-current:Ic=-100mA

Collector-Emiller Voltage:VCE=-45V

ABSOLUTE MAXIMUM RATINGS

(Ta=25 C)

o

Symbol

Rating

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Dissipation

Junction Temperature

Storage Temperature

Ta=25 C*

o

V

Ic

P

T

CBO

CEO

EBO

D

j

stg

-50

-45

-5

-100

225

150

-55~150

V

mA

mW

C

O

C

Characteristic

PNP EPITAXIAL SILICON TRANSISTOR

2 S A 1 0 3 7

Electrical Characteristics

(Ta=25 C)

o

Parameter

Symbol

Condition

Unit

MAX.

TYP.

MIN.

Emitter-Base Breakdown Voltage

-Base Cutoff Current

DC Current Gain

Collector-Emitter Saturation Voltage

Current Gain-Bandwidth Product

Noise Figure

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage#

Collector

Emitter-Base Cutoff Current

Base-Emitter Saturation Voltage

Base-Emitter on Voltage

Output Capacitance

CEO

EBO

FE

CE(sat)

BE(sat)

BE(on)

BV

I

V

Cob

BV

I

f

CBO

EBO

CBO

T

H

NF

I =-100 A

I =-1mA

I =-100 A

C

E

I =0

V

=-50V, V =0

V

=-5V, I =0

V

=-5V, I =1mA

I =-100mA, I =-5mA

V

=-5V, I =-2mA

V

=-10V, I =0 f=1MHz

V

=-5V I =-10mA

V

=-5V I =-0.2mA

f=1MHz Rs=1Kohm

E

B

C

CB

C

CB

C

CE

C

B

C

B

C

CB

E

CE

C

CE

C

e

V

nA

-50

-45

-5

60

-50

600

-0.7

100

-0.75

7

10

MHz

V

*Total Device

Pulse Test: Pulse Width 300uS Duty cycle 2%

DEVICE MARKING:

2SA1037=M6

#

Dissipation:FR=1X0.75X0.062 in Board Derate 25 C

o

-0.6

100

200

-0.20

-0.82

-0.67

4.5

190

0.7

PF

dB

3

1

2

SOT-23

1.BASE

2.EMITTER

3.COLLECTOR

1.

1.3

2.4

Unit:mm

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

RoHS

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