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MCR22-8G Datenblatt(PDF) 1 Page - ON Semiconductor

Teilenummer MCR22-8G
Bauteilbeschribung  Sensitive Gate Silicon Controlled Rectifiers
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MCR22-8G Datenblatt(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2008
November, 2008 − Rev. 6
1
Publication Order Number:
MCR22−6/D
MCR22-6, MCR22-8
Preferred Device
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed and tested for repetitive peak operation required for CD
ignition, fuel ignitors, flash circuits, motor controls and low−power
switching applications.
Features
150 A for 2 ms Safe Area
High dv/dt
Very Low Forward “On” Voltage at High Current
Low−Cost TO−226 (TO−92)
Pb−Free Packages are Available*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off−State Voltage (Note 1)
(RGK = IK, TJ = *40 to +110°C, Sine Wave,
50 to 60 Hz, RGK = 1kW)
MCR22−6
MCR22−8
VDRM,
VRRM
400
600
V
On−State Current RMS
(180° Conduction Angles, TC = 80°C)
IT(RMS)
1.5
A
Peak Non−repetitive Surge Current,
@TA = 25°C, (1/2 Cycle, Sine Wave, 60 Hz)
ITSM
15
A
Circuit Fusing Considerations (t = 8.3 ms)
I2t
0.9
A2s
Forward Peak Gate Power
(Pulse Width ≤ 1.0 msec, TA = 25°C)
PGM
0.5
W
Forward Average Gate Power
(t = 8.3 msec, TA = 25°C)
PG(AV)
0.1
W
Forward Peak Gate Current
(Pulse Width ≤ 1.0 ms, TA = 25°C)
IFGM
0.2
A
Reverse Peak Gate Voltage
(Pulse Width ≤ 1.0 ms, TA = 25°C)
VRGM
5.0
V
Operating Junction Temperature Range
@ Rated VRRM and VDRM
TJ
−40 to +110
°C
Storage Temperature Range
Tstg
−40 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
50
°C/W
Thermal Resistance, Junction−to−Ambient
RqJA
160
°C/W
Lead Solder Temperature
(Lead Length q 1/16″ from case, 10 S Max)
TL
+260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SCRs
1.5 AMPERES RMS
400 thru 600 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
TO−92 (TO−226)
CASE 029
STYLE 10
PIN ASSIGNMENT
1
2
3
Gate
Anode
Cathode
K
G
A
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
ORDERING INFORMATION
MCR
22−x
AYWW G
G
MARKING DIAGRAMS
MCR22−x = Device Code
x = 6 or 8
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
http://onsemi.com
1 2
3
1
2
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3


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