Datenblatt-Suchmaschine für elektronische Bauteile |
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MCR22-8G Datenblatt(PDF) 1 Page - ON Semiconductor |
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MCR22-8G Datenblatt(HTML) 1 Page - ON Semiconductor |
1 / 7 page © Semiconductor Components Industries, LLC, 2008 November, 2008 − Rev. 6 1 Publication Order Number: MCR22−6/D MCR22-6, MCR22-8 Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed and tested for repetitive peak operation required for CD ignition, fuel ignitors, flash circuits, motor controls and low−power switching applications. Features • 150 A for 2 ms Safe Area • High dv/dt • Very Low Forward “On” Voltage at High Current • Low−Cost TO−226 (TO−92) • Pb−Free Packages are Available* MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage (Note 1) (RGK = IK, TJ = *40 to +110°C, Sine Wave, 50 to 60 Hz, RGK = 1kW) MCR22−6 MCR22−8 VDRM, VRRM 400 600 V On−State Current RMS (180° Conduction Angles, TC = 80°C) IT(RMS) 1.5 A Peak Non−repetitive Surge Current, @TA = 25°C, (1/2 Cycle, Sine Wave, 60 Hz) ITSM 15 A Circuit Fusing Considerations (t = 8.3 ms) I2t 0.9 A2s Forward Peak Gate Power (Pulse Width ≤ 1.0 msec, TA = 25°C) PGM 0.5 W Forward Average Gate Power (t = 8.3 msec, TA = 25°C) PG(AV) 0.1 W Forward Peak Gate Current (Pulse Width ≤ 1.0 ms, TA = 25°C) IFGM 0.2 A Reverse Peak Gate Voltage (Pulse Width ≤ 1.0 ms, TA = 25°C) VRGM 5.0 V Operating Junction Temperature Range @ Rated VRRM and VDRM TJ −40 to +110 °C Storage Temperature Range Tstg −40 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 50 °C/W Thermal Resistance, Junction−to−Ambient RqJA 160 °C/W Lead Solder Temperature (Lead Length q 1/16″ from case, 10 S Max) TL +260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SCRs 1.5 AMPERES RMS 400 thru 600 VOLTS Preferred devices are recommended choices for future use and best overall value. TO−92 (TO−226) CASE 029 STYLE 10 PIN ASSIGNMENT 1 2 3 Gate Anode Cathode K G A See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. ORDERING INFORMATION MCR 22−x AYWW G G MARKING DIAGRAMS MCR22−x = Device Code x = 6 or 8 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) http://onsemi.com 1 2 3 1 2 BENT LEAD TAPE & REEL AMMO PACK STRAIGHT LEAD BULK PACK 3 |
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