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L6203 Datenblatt(PDF) 10 Page - STMicroelectronics |
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L6203 Datenblatt(HTML) 10 Page - STMicroelectronics |
10 / 20 page CIRCUIT DESCRIPTION The L6201/1PS/2/3 is a monolithic full bridge switching motor driver realized in the new Mul- tipower-BCD technology which allows the integra- tion of multiple, isolated DMOS power transistors plus mixed CMOS/bipolar control circuits. In this way it has been possible to make all the control inputs TTL, CMOS and µC compatible and elimi- nate the necessity of external MOS drive compo- nents. The Logic Drive is shown in table 1. Table 1 Inputs Output Mosfets (*) VEN = H IN1 IN2 L L H H L H L H Sink 1, Sink 2 Sink 1, Source 2 Source 1, Sink 2 Source 1, Source 2 VEN = L X X All transistors turned oFF L = Low H = High X = DON’t care (*) Numbers referred to INPUT1 or INPUT2 controlled output stages Although the device guarantees the absence of cross-conduction, the presence of the intrinsic di- odes in the POWER DMOS structure causes the generation of current spikes on the sensing termi- nals. This is due to charge-discharge phenomena in the capacitors C1 & C2 associated with the drain source junctions (fig. 14). When the output switches from high to low, a current spike is gen- erated associated with the capacitor C1. On the low-to-high transition a spike of the same polarity is generated by C2, preceded by a spike of the opposite polarity due to the charging of the input capacity of the lower POWER DMOS transistor (fig. 15). TRANSISTOR OPERATION ON State When one of the POWER DMOS transistor is ON it can be considered as a resistor RDS (ON) throughout the recommended operating range. In this condition the dissipated power is given by : PON = RDS (ON) ⋅ IDS2 (RMS) The low RDS (ON) of the Multipower-BCD process can provide high currents with low power dissipa- tion. OFF State When one of the POWER DMOS transistor is OFF the VDS voltage is equal to the supply volt- age and only the leakage current IDSS flows. The power dissipation during this period is given by : POFF = VS ⋅ IDSS The power dissipation is very low and is negligible in comparison to that dissipated in the ON STATE. Transitions As already seen above the transistors have an in- trinsic diode between their source and drain that can operate as a fast freewheeling diode in switched mode applications. During recirculation with the ENABLE input high, the voltage drop across the transistor is RDS (ON) ⋅ ID and when it reaches the diode forward voltage it is clamped. When the ENABLE input is low, the POWER MOS is OFF and the diode carries all of the recir- culation current. The power dissipated in the tran- sitional times in the cycle depends upon the volt- age-current waveforms and in the driving mode. (see Fig. 7ab and Fig. 8abc). Ptrans. = IDS (t) ⋅ VDS (t) Figure 14: Intrinsic Structures in the POWER DMOS Transistors Figure 15: Current Typical Spikes on the Sens- ing Pin L6201 - L6202 - L6203 10/20 |
Ähnliche Teilenummer - L6203 |
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Ähnliche Beschreibung - L6203 |
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