Datenblatt-Suchmaschine für elektronische Bauteile |
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IRLL014N Datenblatt(PDF) 2 Page - International Rectifier |
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IRLL014N Datenblatt(HTML) 2 Page - International Rectifier |
2 / 9 page IRLL014N 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.015 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.14 VGS = 10V, ID = 2.0A ––– ––– 0.20 Ω VGS = 5.0V, ID = 1.2A ––– ––– 0.28 VGS = 4.0V, ID = 1.0A VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 2.3 ––– ––– S VDS = 25V, ID = 1.0A ––– ––– 25 µA VDS = 55V, VGS = 0V ––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V Qg Total Gate Charge ––– 9.5 14 ID = 2.0A Qgs Gate-to-Source Charge ––– 1.1 1.7 nC VDS = 44V Qgd Gate-to-Drain ("Miller") Charge ––– 3.0 4.4 VGS = 10V, See Fig. 6 and 9 td(on) Turn-On Delay Time ––– 5.1 ––– VDD = 28V tr Rise Time ––– 4.9 ––– ns ID = 2.0A td(off) Turn-Off Delay Time ––– 14 ––– RG = 6.0Ω tf Fall Time ––– 2.9 ––– RD = 14Ω, See Fig. 10 Ciss Input Capacitance ––– 230 ––– VGS = 0V Coss Output Capacitance ––– 66 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 30 ––– ƒ = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) I SD ≤ 2.0A, di/dt ≤ 170A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Notes: V DD = 25V, starting TJ = 25°C, L = 4.0mH RG = 25Ω, IAS = 4.0A. (See Figure 12) Pulse width ≤ 300µs; duty cycle ≤ 2%. Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 2.0A, VGS = 0V trr Reverse Recovery Time ––– 41 61 ns TJ = 25°C, IF = 2.0A Qrr Reverse RecoveryCharge ––– 73 110 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics ––– ––– ––– ––– 16 1.3 A |
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