Datenblatt-Suchmaschine für elektronische Bauteile |
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STP8N80K5 Datenblatt(PDF) 8 Page - STMicroelectronics |
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STP8N80K5 Datenblatt(HTML) 8 Page - STMicroelectronics |
8 / 16 page Electrical characteristics STP8N80K5, STU8N80K5 8/16 DocID023544 Rev 4 Figure 14. Drain-source diode forward characteristics Figure 15. Normalized VDS vs. temperature Figure 16. Maximum avalanche energy vs. starting TJ VSD 1 3 ISD(A) (V) 2 4 5 0.5 0.6 0.7 0.8 0.9 TJ=-50°C TJ=150°C TJ=25°C AM15641v1 VDS -50 0 TJ(°C) (norm) 50 100 0.9 0.94 0.98 1.02 1.06 1.1 ID = 1mA AM15642v1 EAS 0 40 TJ(°C) (mJ) 80 0 20 40 120 60 80 100 VDD=50V ID=2A AM15643v1 |
Ähnliche Teilenummer - STP8N80K5 |
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Ähnliche Beschreibung - STP8N80K5 |
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