Datenblatt-Suchmaschine für elektronische Bauteile |
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STGP20H60DF Datenblatt(PDF) 4 Page - STMicroelectronics |
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STGP20H60DF Datenblatt(HTML) 4 Page - STMicroelectronics |
4 / 22 page Electrical characteristics STGB20H60DF, STGF20H60DF, STGP20H60DF 4/22 DocID023740 Rev 4 2 Electrical characteristics T J = 25 °C unless otherwise specified. Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)CES Collector-emitter breakdown voltage (V GE = 0) I C = 2 mA 600 V V CE(sat) Collector-emitter saturation voltage V GE = 15 V, I C = 20 A 1.6 2.0 V V GE = 15 V, I C = 20 A T J = 125 °C 1.75 V GE = 15 V, I C = 20 A T J = 175 °C 1.8 V GE(th) Gate threshold voltage V CE = V GE , I C = 1 mA 5.0 6.0 7.0 V I CES Collector cut-off current (V GE = 0) V CE = 600 V 25 μA I GES Gate-emitter leakage current (V CE = 0) V GE = ± 20 V 250 nA Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C ies Input capacitance V CE = 25 V, f = 1 MHz, V GE = 0 -2750 - pF C oes Output capacitance - 110 - pF C res Reverse transfer capacitance -65 - pF Q g Total gate charge V CC = 400 V, I C = 20 A, V GE = 15 V -115 - nC Q ge Gate-emitter charge - 22 - nC Q gc Gate-collector charge - 45 - nC |
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