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STF8N80K5 Datenblatt(PDF) 3 Page - STMicroelectronics

Teilenummer STF8N80K5
Bauteilbeschribung  N-channel 800 V, 0.8 typ., 6 A Zener-protected SuperMESH 5 Power MOSFET in TO-220FP
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DocID024419 Rev 2
3/15
STF8N80K5, STFI8N80K5
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
GS
Gate-source voltage
± 30
V
I
D
Drain current T
C
= 25 °C
6
(1)
1.
Limited by package.
A
I
D
Drain current T
C
= 100 °C
4
(1)
A
I
DM
(2)
2.
Pulse width limited by safe operating area.
Drain current (pulsed)
24
(1)
A
P
TOT
Total dissipation at T
C
= 25 °C
25
W
I
AR
(3)
3.
Pulse width limited by T
Jmax.
Max current during repetitive or single
pulse avalanche
2A
E
AS
(4)
4.
Starting T
J
= 25 °C, I
D
=I
AS
, V
DD
= 50 V
Single pulse avalanche energy
(starting T
J
= 25 °C, I
D
=I
AS
, V
DD
= 50 V)
114
mJ
V
ISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s;T
C
=25 °C)
2500
V
dv/dt
(5)
5.
I
SD
≤ 6 A, di/dt ≤ 100 A/μs, V
DS(peak)
≤ V
(BR)DSS
Peak diode recovery voltage slope
4.5
V/ns
dv/dt
(6)
6.
V
DS
≤ 640 V
MOSFET dv/dt ruggedness
50
V/ns
T
j
Operating junction temperature
-55 to 150
°C
T
stg
Storage temperature
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
R
thj-case
Thermal resistance junction-case max.
5
°C/W
R
thj-amb
Thermal resistance junction-amb max.
62.5
°C/W


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