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STF18NM60ND Datenblatt(PDF) 4 Page - STMicroelectronics

Teilenummer STF18NM60ND
Bauteilbeschribung  N-channel 600 V - 0.25 typ., 13 A FDmesh II Power MOSFET (with fast diode) in D2PAK
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Direct Link  http://www.st.com
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Electrical characteristics
STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND
4/22
DocID024653 Rev 1
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1 mA, VGS= 0
600
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = 600 V,
VDS = 600 V, TC=125 °C
1
100
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20 V
±100
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250 µA
34
5
V
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 6.5 A
0.25
0.29
Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS = 50 V, f =1 MHz,
VGS = 0
-
1030
-
pF
Coss
Output capacitance
-
30
-
pF
Crss
Reverse transfer
capacitance
-3.2
-
pF
Coss eq.
(1)
1.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance
VGS = 0, VDS = 0V to 480 V
-148
-
pF
Rg
Gate input resistance
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
open drain
-3.6
-
Ω
Qg
Total gate charge
VDD = 480 V, ID = 13 A
VGS = 10 V
(see Figure 18)
-34
-
nC
Qgs
Gate-source charge
-
5.5
-
nC
Qgd
Gate-drain charge
-
20
-
nC


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