Datenblatt-Suchmaschine für elektronische Bauteile |
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2SD2704KT146 Datenblatt(PDF) 1 Page - Rohm |
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2SD2704KT146 Datenblatt(HTML) 1 Page - Rohm |
1 / 4 page 1/3 www.rohm.com ○ c 2012 ROHM Co., Ltd. All rights reserved. 2012.01 - Rev.C For Muting (20V, 0.3A) 2SD2704K Features Dimensions (Unit : mm) 1) High DC current gain. hFE = 820 to 2700 2) High emitter-base voltage. VEBO = 25V (Min.) 3) Low Ron Ron= 0.7 (Typ.) Structure Epitaxial planar type NPN silicon transistor Packaging specifications Package Code T146 3000 Taping Basic ordering unit (pieces) 2SD2704K Type Absolute maximum ratings (Ta=25 C) Parameter VCBO VCEO VEBO IC PC Tj Tstg 50 V V V A W °C °C 20 25 0.3 0.2 150 −55 to +150 Symbol Limits Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Electrical characteristics (Ta=25 C) Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) fT ∗ Cob Min. 50 20 25 − − − − − − − − − − 50 35 3.9 − − − 0.1 0.1 100 − − V IC =10μA IC =1mA IE =10μA VCB =50V VEB =25V IC/IB =30mA/3mA VCE =6V, IE= −4mA, f=10MHz VCB =10V, IE=0A, f=1MHz V V μA μA hFE 820 − 2700 VCE =2V, IC=4mA − mV MHz pF Ron − 0.7 − IB =5mA, Vi=100mV(rms), f=1kHz Ω Typ. Max. Unit Conditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance Output On-resistance ∗ Measured using pulse current (2) (1) 0.4 (3) 2.9 1.9 0.95 0.95 0.8 0.15 1.1 2SD2704K (1) Emitter (2) Base (3) Collector ROHM : SMT3 EIAJ : SC-59 Abbreviated symbol : XL Each lead has same dimensions |
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