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AM29F010-120DWE1 Datenblatt(PDF) 1 Page - Advanced Micro Devices

Teilenummer AM29F010-120DWE1
Bauteilbeschribung  1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1
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SUPPLEMENT
1/13/98
Publication# 21116
Rev: B Amendment/0
Issue Date: January 1998
Am29F010 Known Good Die
1 Megabit (128 K x 8-Bit)
CMOS 5.0 Volt-only, Uniform Sector Flash Memory—Die Revision 1
DISTINCTIVE CHARACTERISTICS
s Single power supply operation
— 5.0 V
± 10% for read, erase, and program
operations
— Simplifies system-level power requirements
s High performance
— 90 or 120 ns maximum access time
s Low power consumption
— 30 mA max active read current
— 50 mA max program/erase current
—<25
µA typical standby current
s Flexible sector architecture
— Eight uniform sectors
— Any combination of sectors can be erased
— Supports full chip erase
s Sector protection
— Hardware-based feature that disables/re-
enables program and erase operations in any
combination of sectors
— Sector protection/unprotection can be
implemented using standard PROM
programming equipment
s Embedded Algorithms
— Embedded Erase algorithm automatically
pre-programs and erases the chip or any
combination of designated sector
— Embedded Program algorithm automatically
programs and verifies data at specified address
s Minimum 100,000 program/erase cycles
guaranteed
s Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash
— Superior inadvertent write protection
s Data Polling and Toggle Bits
— Provides a software method of detecting
program or erase cycle completion
s Tested to datasheet specifications at
temperature
s Quality and reliability levels equivalent to
standard packaged components


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