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MTV6N100E Datenblatt(PDF) 2 Page - Motorola, Inc

Teilenummer MTV6N100E
Bauteilbeschribung  TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM
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Hersteller  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MTV6N100E Datenblatt(HTML) 2 Page - Motorola, Inc

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MTV6N100E
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
1000
1270
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 1000 Vdc, VGS = 0 Vdc)
(VDS = 1000 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
10
100
µAdc
Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc)
IGSS
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
3.0
7.0
4.0
Vdc
mV/
°C
Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 3.0 Adc)
RDS(on)
1.28
1.5
Ohm
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 6.0 Adc)
(VGS = 10 Vdc, ID = 3.0 Adc, TJ = 125°C)
VDS(on)
7.9
14.4
9.5
Vdc
Forward Transconductance (VDS = 10 Vdc, ID = 3.0 Adc)
gFS
4.0
7.2
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
3000
4210
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
219
440
Transfer Capacitance
f = 1.0 MHz)
Crss
43
90
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
(VDD = 500 Vdc, ID = 6.0 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
td(on)
27
45
ns
Rise Time
(VDD = 500 Vdc, ID = 6.0 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
tr
29
65
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 9.1 Ω)
td(off)
93
170
Fall Time
G = 9.1 Ω)
tf
43
95
Gate Charge
(See Figure 8)
(VDS = 400 Vdc, ID = 6.0 Adc,
VGS = 10 Vdc)
QT
66
100
nC
(See Figure 8)
(VDS = 400 Vdc, ID = 6.0 Adc,
VGS = 10 Vdc)
Q1
12.5
(VDS = 400 Vdc, ID = 6.0 Adc,
VGS = 10 Vdc)
Q2
25.9
Q3
26
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 6.0 Adc, VGS = 0 Vdc)
(IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
0.81
0.64
1.0
Vdc
Reverse Recovery Time
(IS = 6.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
trr
735
ns
(IS = 6.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
ta
188
(IS = 6.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
tb
547
Reverse Recovery Stored Charge
QRR
4.7
µC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″ from package to center of die)
LD
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
13
nH
(1) Pulse Test: Pulse Width
≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.


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