Datenblatt-Suchmaschine für elektronische Bauteile |
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AM29F040-150EI Datenblatt(PDF) 9 Page - Advanced Micro Devices |
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AM29F040-150EI Datenblatt(HTML) 9 Page - Advanced Micro Devices |
9 / 33 page Am29F040 9 Table 4. Am29F040 Command Definitions Notes: 1. Address bits A15, A16, A17, and A18 = X = Don’t Care for all address commands except for Program Address (PA), Sector Address (SA), Read Address (RA), and autoselect sector protect verify. 2. Bus operations are defined in Table 1. 3. RA = Address of the memory location to be read. PA = Address of the memory location to be programmed. Addresses are latched on the falling edge of the WEpulse. SA = Address of the sector to be erased. The combination of A18, A17, A16 will uniquely select any sector (see Table 3). 4. RD = Data read from location RA during read operation. PD = Data to be programmed at location PA. Data is latched on the rising edge of WE. 5. Read from non-erasing sectors is allowed in the Erase Suspend mode. Read/Reset Command The read or reset operation is initiated by writing the read/reset command sequence into the command reg- ister. Microprocessor read cycles retrieve array data from the memory. The device remains enabled for reads until the command register contents are altered. The device will automatically power-up in the read/ reset state. In this case, a command sequence is not required to read data. Standard microprocessor read cycles will retrieve array data. This default value en- sures that no spurious alteration of the memory content occurs during the power transition. Refer to the AC Read Characteristics and Waveforms for the specific timing parameters. Autoselect Command Flash memories are intended for use in applications where the local CPU alters memory contents. As such, manufacture and device codes must be accessible while the device resides in the target system. PROM programmers typically access the signature codes by raising A9 to a high voltage. However, multiplexing high voltage onto the address lines is not generally desired system design practice. The device contains a command autoselect operation to supplement traditional PROM programming method- ology. The operation is initiated by writing the auto- select command sequence into the command register. Following the command write, a read cycle from ad- dress XX00H retrieves the manufacture code of 01H. A read cycle from address XX01H returns the device code A4H (see Table 2). All manufacturer and device codes will exhibit odd parity with the MSB (DQ7) defined as the parity bit. Scanning the sector addresses (A16, A17, A18) while (A6, A1, A0) = (0, 1, 0) will produce a logical “1” at device output DQ0 for a protected sector. To terminate the operation, it is necessary to write the read/reset command sequence into the register. Byte Programming The device is programmed on a byte-by-byte basis. Programming is a four bus cycle operation. There are two “unlock” write cycles. These are followed by the program setup command and data write cycles. Ad- dresses are latched on the falling edge of CE or WE, whichever happens later and the data is latched on the rising edge of CE or WE, whichever happens first. The Command Sequence Read/Reset Bus Write Cycles Req’d First Bus Write Cycle Second Bus Write Cycle Third Bus Write Cycle Fourth Bus Read/Write Cycle Fifth Bus Write Cycle Sixth Bus Write Cycle Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data Read/Reset 1 XXXXH F0H Read/Reset 4 5555H AAH 2AAAH 55H 5555H F0H RA RD Autoselect 4 5555H AAH 2AAAH 55H 5555H 90H 00H 01H 01H A4H Byte Program 4 5555H AAH 2AAAH 55H 5555H A0H PA PD Chip Erase 6 5555H AAH 2AAAH 55H 5555H 80H 5555H AAH 2AAAH 55H 5555H 10H Sector Erase 6 5555H AAH 2AAAH 55H 5555H 80H 5555H AAH 2AAAH 55H SA 30H Sector Erase Suspend Erase can be suspended during sector erase with Addr (don’t care), Data (B0H) Sector Erase Resume Erase can be resumed after suspend with Addr (don’t care), Data (30H) |
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