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AM29F800BB-120DTE1 Datenblatt(PDF) 9 Page - Advanced Micro Devices |
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AM29F800BB-120DTE1 Datenblatt(HTML) 9 Page - Advanced Micro Devices |
9 / 9 page 5/4/98 Am29F800B Known Good Die 9 SU PP L E ME NT REVISION SUMMARY FOR AM29F800B KGD Revision A+1, A+2 Distinctive Characteristics Changed typical program/erase time to 30 mA to match the CMOS DC Characteristics table in the Am29F400B full data sheet. The minimum guarante per sector is now 1 million cycles. Pad Description Corrected the following dimensions: X (mils): pads 15, 18, 36 Y (mils): pads 10–12, 35, 36 X (mm): pads 2–22, 37, 38 Y (mm): pads 10–12, 23–32, 35, 36 Physical Specifications Changed die thickness specification to ~20 mils. Trademarks Copyright © 1998 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes only and may be trademarks of their respective companies. |
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