SI4906DY-T1-E3 datasheet(3/10 Pages) VISHAY

Teilenummer	SI4906DY-T1-E3

Bauteilbeschribung	Dual N-Channel 40-V (D-S) MOSFET

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Hersteller	VISHAY [Vishay Siliconix]

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3 / 10 page

Document Number: 73867

S09-2432-Rev. C, 16-Nov-09

www.vishay.com

3

Vishay Siliconix

Si4906DY

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

6

12

18

24

30

0.0

0.5

1.0

1.5

2.0

2.5

3 V

VDS - Drain-to-Source Voltage (V)

V

= 10 V thru 4 V

GS

0.020

0.028

0.036

0.044

0.052

0.060

04

8

12

16

20

VGS = 10 V

ID - Drain Current (A)

VGS = 4.5 V

0

2

4

6

8

10

0369

12

15

ID = 5 A

Qg - Total Gate Charge (nC)

VDS = 30 V

VDS = 10 V

VDS = 20 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0.0

0.4

0.8

1.2

1.6

2.0

0.0

0.8

1.6

2.4

3.2

4.0

TC = 125 °C

- 55 °C

VGS - Gate-to-Source Voltage (V)

25 °C

Crss

0

180

360

540

720

900

0

6

12

18

24

30

Coss

Ciss

VDS - Drain-to-Source Voltage (V)

0.6

0.9

1.2

1.5

1.8

- 50

- 25

0

25

50

75

100

125

150

TJ - Junction Temperature (°C)

VGS = 4.5 V

ID = 5 A

VGS = 10 V

Ähnliche Beschreibung - SI4906DY-T1-E3

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SI4906DY-T1-E3 Datenblatt(PDF) 3 Page - Vishay Siliconix

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Ähnliche Teilenummer - SI4906DY-T1-E3

Ähnliche Beschreibung - SI4906DY-T1-E3

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