Datenblatt-Suchmaschine für elektronische Bauteile
  German  ▼
ALLDATASHEETDE.COM

X  

AM29LV160BB90SCB Datenblatt(PDF) 10 Page - Advanced Micro Devices

Teilenummer AM29LV160BB90SCB
Bauteilbeschribung  16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Download  48 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Hersteller  AMD [Advanced Micro Devices]
Direct Link  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29LV160BB90SCB Datenblatt(HTML) 10 Page - Advanced Micro Devices

Back Button AM29LV160BB90SCB Datasheet HTML 6Page - Advanced Micro Devices AM29LV160BB90SCB Datasheet HTML 7Page - Advanced Micro Devices AM29LV160BB90SCB Datasheet HTML 8Page - Advanced Micro Devices AM29LV160BB90SCB Datasheet HTML 9Page - Advanced Micro Devices AM29LV160BB90SCB Datasheet HTML 10Page - Advanced Micro Devices AM29LV160BB90SCB Datasheet HTML 11Page - Advanced Micro Devices AM29LV160BB90SCB Datasheet HTML 12Page - Advanced Micro Devices AM29LV160BB90SCB Datasheet HTML 13Page - Advanced Micro Devices AM29LV160BB90SCB Datasheet HTML 14Page - Advanced Micro Devices Next Button
Zoom Inzoom in Zoom Outzoom out
 10 / 48 page
background image
Am29LV160B
9
Writing Commands/Command Sequences
To write a command or command sequence (which
includes programming data to the device and erasing
sectors of memory), the system must drive WE# and
CE# to VIL, and OE# to VIH.
For program operations, the BYTE# pin determines
whether the device accepts program data in bytes or
words. Refer to “Word/Byte Configuration” for more
information.
The device features an Unlock Bypass mode to facili-
tate faster programming. Once the device enters the
Unlock Bypass mode, only two write cycles are
required to program a word or byte, instead of four. The
“Word/Byte Program Command Sequence” section
has details on programming data to the device using
bot h s t and ard and U n l o c k B y pas s c o mmand
sequences.
An erase operation can erase one sector, multiple sec-
tors, or the entire device. Tables 2 and 3 indicate the
address space that each sector occupies. A “sector
address” consists of the address bits required to
uniquely select a sector. The “Command Definitions”
section has details on erasing a sector or the entire
chip, or suspending/resuming the erase operation.
After the system writes the autoselect command
sequence, the device enters the autoselect mode. The
system can then read autoselect codes from the
internal register (which is separate from the memory
array) on DQ7–DQ0. Standard read cycle timings apply
in this mode. Refer to the “Autoselect Mode” and
“Autoselect Command Sequence” sections for more
information.
ICC2 in the DC Characteristics table represents the ac-
tive current specification for the write mode. The “AC
Characteristics” section contains timing specification
tables and timing diagrams for write operations.
Program and Erase Operation Status
During an erase or program operation, the system may
check the status of the operation by reading the status
bits on DQ7–DQ0. Standard read cycle timings and ICC
read specifications apply. Refer to “Write Operation
Status” for more information, and to “AC Characteris-
tics” for timing diagrams.
Standby Mode
When the system is not reading or writing to the device,
it can place the device in the standby mode. In this
mode, current consumption is greatly reduced, and the
outputs are placed in the high impedance state, inde-
pendent of the OE# input.
The device enters the CMOS standby mode when the
CE# and RESET# pins are both held at VCC ± 0.3 V.
(Note that this is a more restricted voltage range than
VIH.) If CE# and RESET# are held at VIH, but not within
VCC ± 0.3 V, the device will be in the standby mode, but
the standby current will be greater. The device requires
standard access time (tCE) for read access when the
device is in either of these standby modes, before it is
ready to read data.
If the device is deselected during erasure or program-
min g, th e device draws active curren t unt il th e
operation is completed.
In the DC Characteristics table, ICC3 and ICC4 repre-
sents the standby current specification.
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device
energy consumption. The device automatically enables
this mode when addresses remain stable for tACC + 30
ns. The automatic sleep mode is independent of the
CE#, WE#, and OE# control signals. Standard address
access timings provide new data when addresses are
changed. While in sleep mode, output data is latched
and always available to the system. ICC4 in the DC
Characteristics table represents the automatic sleep
mode current specification.


Ähnliche Teilenummer - AM29LV160BB90SCB

HerstellerTeilenummerDatenblattBauteilbeschribung
logo
Advanced Micro Devices
AM29LV160BB90SCB AMD-AM29LV160BB90SCB Datasheet
649Kb / 46P
   16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
More results

Ähnliche Beschreibung - AM29LV160BB90SCB

HerstellerTeilenummerDatenblattBauteilbeschribung
logo
Advanced Micro Devices
AM29LV160B AMD-AM29LV160B Datasheet
649Kb / 46P
   16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
logo
Excel Semiconductor Inc...
ES29LV160F EXCELSEMI-ES29LV160F Datasheet
1Mb / 71P
   16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
logo
Advanced Micro Devices
AM29LV160B AMD-AM29LV160B_05 Datasheet
1Mb / 54P
   16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
logo
SPANSION
S29AL016J SPANSION-S29AL016J Datasheet
1Mb / 58P
   16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
logo
Advanced Micro Devices
AM29LV160D AMD-AM29LV160D Datasheet
1Mb / 49P
   16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV160D AMD-AM29LV160D_06 Datasheet
1Mb / 52P
   16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
logo
SPANSION
S29AL016J70BFI010 SPANSION-S29AL016J70BFI010 Datasheet
1Mb / 58P
   16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
logo
Advanced Micro Devices
AM29LV160DT-70EI AMD-AM29LV160DT-70EI Datasheet
1Mb / 50P
   16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
logo
SPANSION
AM29LV160DB-70EC SPANSION-AM29LV160DB-70EC Datasheet
1Mb / 52P
   16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
S29AL016J70BFI020 SPANSION-S29AL016J70BFI020 Datasheet
1Mb / 58P
   16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48


Datenblatt Download

Go To PDF Page


Link URL




Privatsphäre und Datenschutz
ALLDATASHEETDE.COM
War ALLDATASHEET hilfreich?  [ DONATE ] 

Über Alldatasheet   |   Werbung   |   Kontakt   |   Privatsphäre und Datenschutz   |   Linktausch   |   Hersteller
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com