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STGW50NC60W Datenblatt(PDF) 4 Page - STMicroelectronics

Teilenummer STGW50NC60W
Bauteilbeschribung  N-channel 600V - 55A - TO-247
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGW50NC60W Datenblatt(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STGW50NC60W
4/14
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
Static
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
VBR(CES)
Collector-emitter
breakdown voltage
IC= 1mA, VGE= 0
600
V
VCE(sat)
Collector-emitter saturation
voltage
VGE= 15V, IC= 40A
VGE= 15V, IC=40A,Tc=125°C
2.1
1.9
2.6
V
V
VGE(th)
Gate threshold voltage
VCE= VGE, IC= 250µA
3.75
5.75
V
ICES
Collector cut-off current
(VGE = 0)
VCE= Max rating,TC= 25°C
VCE= Max rating,TC= 125°C
500
5
µA
mA
IGES
Gate-emitter leakage
current (VCE = 0)
VGE= ±20V, VCE= 0
±100
nA
gfs
Forward transconductance
VCE = 15V, IC=40A
25
S
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Cies
Coes
Cres
Input capacitance
Output capacitance
Reverse transfer
capacitance
VCE = 25V, f = 1MHz,
VGE = 0
4700
410
90
pF
pF
pF
Qg
Qge
Qgc
Total gate charge
Gate-emitter charge
Gate-collector charge
VCE = 390V, IC = 40A,
VGE = 15V,
Figure 16
195
32
82
nC
nC
nC


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